Deep-ultraviolet photodetector based on exfoliated n-type beta-Ga2O3 nanobelt/p-Si substrate heterojunction
DC Field | Value | Language |
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dc.contributor.author | Shin, Gahyun | - |
dc.contributor.author | Kim, Hong-Yeol | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-02T15:14:53Z | - |
dc.date.available | 2021-09-02T15:14:53Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2018-02 | - |
dc.identifier.issn | 0256-1115 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/77479 | - |
dc.description.abstract | Low-dimensional semiconductor p-n junctions as components for optoelectronic devices are considered to be more promising than thin film equivalents. We fabricated heterojunction p-n solar blind photodiodes with the configuration of n-type beta-Ga2O3 nanobelts contacted onto p-Si substrates. The junction between beta-Ga2O3 and Si was formed by van der Waals interactions. The fabricated heterojunction p-n diodes exhibited typical rectifying current-voltage characteristics, with a rectification ratio as high as 1.56x10(4) at +/- 20 V and an ideality factor of approximately eight. Photoresponsive measurements showed that the heterojunction p-n diodes had a high sensitivity and selectivity for light at a wavelength of 254 nm, with fast response and decay characteristics. For the fast-response components, the response time constant was 4.06 s and the decay time constant was 0.16 s. The exfoliated beta-Ga2O3 nanobelt/Si p-n heterojunction presented here constitutes a functional unit for low-dimensional ultra-wide bandgap electronic and optoelectronic devices. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | KOREAN INSTITUTE CHEMICAL ENGINEERS | - |
dc.subject | SOLAR-BLIND PHOTODETECTORS | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.title | Deep-ultraviolet photodetector based on exfoliated n-type beta-Ga2O3 nanobelt/p-Si substrate heterojunction | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1007/s11814-017-0279-7 | - |
dc.identifier.scopusid | 2-s2.0-85037374212 | - |
dc.identifier.wosid | 000423598000030 | - |
dc.identifier.bibliographicCitation | KOREAN JOURNAL OF CHEMICAL ENGINEERING, v.35, no.2, pp.574 - 578 | - |
dc.relation.isPartOf | KOREAN JOURNAL OF CHEMICAL ENGINEERING | - |
dc.citation.title | KOREAN JOURNAL OF CHEMICAL ENGINEERING | - |
dc.citation.volume | 35 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 574 | - |
dc.citation.endPage | 578 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002311127 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Engineering, Chemical | - |
dc.subject.keywordPlus | SOLAR-BLIND PHOTODETECTORS | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordAuthor | beta-Ga2O3 | - |
dc.subject.keywordAuthor | Nanobelt | - |
dc.subject.keywordAuthor | Solar-blind Photodiode | - |
dc.subject.keywordAuthor | p-n Heterojunction | - |
dc.subject.keywordAuthor | van der Waals Interaction | - |
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