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A compact model of fully-depleted surrounding-gate (SG) MOSFETs with a doped body
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hwang, Sung Woo | - |
| dc.date.accessioned | 2021-09-02T15:35:56Z | - |
| dc.date.available | 2021-09-02T15:35:56Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/77713 | - |
| dc.publisher | IEEE | - |
| dc.title | A compact model of fully-depleted surrounding-gate (SG) MOSFETs with a doped body | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Hwang, Sung Woo | - |
| dc.identifier.bibliographicCitation | The 2008 Silicon Nanoelectronics Workshop | - |
| dc.relation.isPartOf | The 2008 Silicon Nanoelectronics Workshop | - |
| dc.citation.title | The 2008 Silicon Nanoelectronics Workshop | - |
| dc.citation.conferencePlace | US | - |
| dc.citation.conferenceDate | 2008-06-15 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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