Challenging endeavor to integrate gallium and carbon via direct bonding to evolve GaN on diamond architecture
- Authors
- Kim, Jong Cheol; Lee, Jinhyung; Kim, Jongsik; Singh, Rajiv K.; Jawali, Puneet; Subhash, Ghatu; Lee, Haigun; Arjunan, Arul Chakkaravarthi
- Issue Date
- 1-1월-2018
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- GaN on diamond; Spark plasma sintering; Direct bonding; Heat dissipation; Immiscibility between Ga and C
- Citation
- SCRIPTA MATERIALIA, v.142, pp.138 - 142
- Indexed
- SCIE
SCOPUS
- Journal Title
- SCRIPTA MATERIALIA
- Volume
- 142
- Start Page
- 138
- End Page
- 142
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/78018
- DOI
- 10.1016/j.scriptamat.2017.08.041
- ISSN
- 1359-6462
- Abstract
- This paper depicts efforts for fabricating GaN on diamond microstructure through direct bonding between Ga and C, while excluding the use of adhesive interlayer during spark plasma sintering (SPS) process. The resulting GaN on diamond architecture is seemingly successful, as suggested by macroscopic morphological observations. The microscopic inspection using high-resolution transmission electron microscopy (HRTEM), however, shows a unique, off-the-chart interlayer configuration, wherein the components are migrated, etched, or fused to tentatively form multiple crystal phases. These phases can be constructed based on their utmost stabilities among all possible phases thermodynamically driven under or near the SPS conditions. (C) 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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