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Fabrication and characterization of suspended silicon nanowire devices with intruded metal silicide contact
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hwang, Sung Woo | - |
| dc.date.accessioned | 2021-09-02T16:50:05Z | - |
| dc.date.available | 2021-09-02T16:50:05Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/78364 | - |
| dc.publisher | ICPS | - |
| dc.title | Fabrication and characterization of suspended silicon nanowire devices with intruded metal silicide contact | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Hwang, Sung Woo | - |
| dc.identifier.bibliographicCitation | 29th International Conference on the Physics of Semiconductors (ICPS2008), pp.458 - 459 | - |
| dc.relation.isPartOf | 29th International Conference on the Physics of Semiconductors (ICPS2008) | - |
| dc.citation.title | 29th International Conference on the Physics of Semiconductors (ICPS2008) | - |
| dc.citation.startPage | 458 | - |
| dc.citation.endPage | 459 | - |
| dc.citation.conferencePlace | BL | - |
| dc.citation.conferenceDate | 2008-07-27 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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