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A 600GHz varactor frequency multiplier using 65-nm CMOS technology

Authors
Choi, S. H.Yi, C.Kim, M.
Issue Date
1월-2018
Publisher
WILEY
Keywords
terahertz; CMOS varactor; frequency multiplier
Citation
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.60, no.1, pp.114 - 117
Indexed
SCIE
SCOPUS
Journal Title
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Volume
60
Number
1
Start Page
114
End Page
117
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/78422
DOI
10.1002/mop.30924
ISSN
0895-2477
Abstract
A terahertz frequency multiplier is fabricated using a 65-nm CMOS technology. A modified model for an n-type thin-oxide varactor is also created from measured S-parameter data sets around 300 and 600GHz. The multiplier circuit produces -20.9dBm of probe-measured output power at 595 GHz, and its performance is in a close agreement with the simulated data proving the accuracy of the modified varactor model.
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공과대학 (전기전자공학부)
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