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Electrical characteristies of ZnO based thin film transistors via overlapped layer between drain/source gate electrodes
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ju, Byeongkwon | - |
| dc.date.accessioned | 2021-09-02T17:51:56Z | - |
| dc.date.available | 2021-09-02T17:51:56Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/78950 | - |
| dc.publisher | EMC | - |
| dc.title | Electrical characteristies of ZnO based thin film transistors via overlapped layer between drain/source gate electrodes | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Ju, Byeongkwon | - |
| dc.identifier.bibliographicCitation | EMC 50th Anniversary 2008 | - |
| dc.relation.isPartOf | EMC 50th Anniversary 2008 | - |
| dc.citation.title | EMC 50th Anniversary 2008 | - |
| dc.citation.conferencePlace | US | - |
| dc.citation.conferenceDate | 2008-06-25 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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