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Maskless epitaxial lateral overgrowth of GaN layers on patterned N+-implanted Si(111) substrate
- Authors
- BYUN, Dong Jin
- Publisher
- International Symposium on the Physics of Semiconductors and Applications (ISPSA)
- Citation
- The 14th International Symposium on the Physics of Semiconductors and Applications
- Conference Name
- The 14th International Symposium on the Physics of Semiconductors and Applications
- Place
- KO
- Conference Date
- 2008-08-26
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