Electrical Properties of Bulk, Non-Polar, Semi-Insulating M-GaN Grown by the Ammonothermal Method
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Polyakov, A. Y. | - |
dc.contributor.author | Smirnov, N. B. | - |
dc.contributor.author | Shchemerov, I. V. | - |
dc.contributor.author | Gogova, D. | - |
dc.contributor.author | Tarelkin, S. A. | - |
dc.contributor.author | Lee, In-Hwan | - |
dc.contributor.author | Pearton, S. J. | - |
dc.date.accessioned | 2021-09-02T21:08:39Z | - |
dc.date.available | 2021-09-02T21:08:39Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2018 | - |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/80892 | - |
dc.description.abstract | Bulk, non-polar M-GaN grown by the Ammonothermal method was studied using dark current versus temperature measurements, photocurrent spectra, photoinduced current transient spectroscopy (PICTS), high temperature current-voltage (I-V), and low-frequency capacitance-voltage (C-V). These measurements show the samples are semi-insulating p-type, with the Fermi level pinned near E-v + 0.9 eV. The concentration of uncompensated acceptors pinning the Fermi level is low, similar to 10(14) cm(-3) , while the deep trap spectra are dominated by hole traps with ionization energies close to 0.7 eV, 0.9 eV, and 1.2 eV. The former determine the temperature dependence of photocurrent, while the 0.9 eV defects are the ones pinning the Fermi level. The excellent structural properties and high photosensitivity of the non-polar ammono-grown GaN indicate they may have applications as for radiation detectors and as substrates for nonpolar AlGaN/GaN enhancement mode high electron mobility transistors. (C) 2018 The Electrochemical Society. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | GALLIUM NITRIDE | - |
dc.subject | CRYSTAL-GROWTH | - |
dc.subject | DEEP LEVELS | - |
dc.subject | LUMINESCENCE | - |
dc.title | Electrical Properties of Bulk, Non-Polar, Semi-Insulating M-GaN Grown by the Ammonothermal Method | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, In-Hwan | - |
dc.identifier.doi | 10.1149/2.0221805jss | - |
dc.identifier.scopusid | 2-s2.0-85054526074 | - |
dc.identifier.wosid | 000440834200014 | - |
dc.identifier.bibliographicCitation | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.7, no.5, pp.P260 - P265 | - |
dc.relation.isPartOf | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.title | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 7 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | P260 | - |
dc.citation.endPage | P265 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | GALLIUM NITRIDE | - |
dc.subject.keywordPlus | CRYSTAL-GROWTH | - |
dc.subject.keywordPlus | DEEP LEVELS | - |
dc.subject.keywordPlus | LUMINESCENCE | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.