Interface-Engineered Charge-Transport Properties in Benzenedithiol Molecular Electronic Junctions via Chemically p-Doped Graphene Electrodes
DC Field | Value | Language |
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dc.contributor.author | Jang, Yeonsik | - |
dc.contributor.author | Kwon, Sung-Joo | - |
dc.contributor.author | Shin, Jaeho | - |
dc.contributor.author | Jeong, Hyunhak | - |
dc.contributor.author | Hwang, Wang-Taek | - |
dc.contributor.author | Kim, Junwoo | - |
dc.contributor.author | Koo, Jeongmin | - |
dc.contributor.author | Ko, Taeg Yeoung | - |
dc.contributor.author | Ryu, Sunmin | - |
dc.contributor.author | Wang, Gunuk | - |
dc.contributor.author | Lee, Tae-Woo | - |
dc.contributor.author | Lee, Takhee | - |
dc.date.accessioned | 2021-09-02T21:58:34Z | - |
dc.date.available | 2021-09-02T21:58:34Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2017-12-06 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/81205 | - |
dc.description.abstract | In this study, we fabricated and characterized vertical molecular junctions consisting of self-assembled monolayers of benzenedithiol (BDT) with a p-doped multilayer graphene electrode. The p-type doping of a graphene film was performed by treating pristine graphene (work function of similar to 4.40 eV) with trifluoromethanesulfonic (TFMS) acid, producing a significantly increased work function (similar to 5.23 eV). The p-doped graphene-electrode molecular junctions statistically showed an order of magnitude higher current density and a lower charge injection barrier height than those of the pristine graphene-electrode molecular junctions, as a result of interface engineering. This enhancement is due to the increased work function of the TFMS-treated p-doped graphene electrode in the highest occupied molecular orbital-mediated tunneling molecular junctions. The validity of these results was proven by a theoretical analysis based on a coherent transport model that considers asymmetric couplings at the electrode-molecule interfaces. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | SELF-ASSEMBLED MONOLAYERS | - |
dc.subject | FILMS | - |
dc.subject | CONTACTS | - |
dc.title | Interface-Engineered Charge-Transport Properties in Benzenedithiol Molecular Electronic Junctions via Chemically p-Doped Graphene Electrodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Wang, Gunuk | - |
dc.identifier.doi | 10.1021/acsami.7b13156 | - |
dc.identifier.scopusid | 2-s2.0-85037748299 | - |
dc.identifier.wosid | 000417669300044 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.9, no.48, pp.42043 - 42049 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 9 | - |
dc.citation.number | 48 | - |
dc.citation.startPage | 42043 | - |
dc.citation.endPage | 42049 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | SELF-ASSEMBLED MONOLAYERS | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | CONTACTS | - |
dc.subject.keywordAuthor | molecular electronics | - |
dc.subject.keywordAuthor | interface engineering | - |
dc.subject.keywordAuthor | charge transport | - |
dc.subject.keywordAuthor | self-assembled monolayer | - |
dc.subject.keywordAuthor | benzenedithiol (BDT) | - |
dc.subject.keywordAuthor | graphene doping | - |
dc.subject.keywordAuthor | transition voltage spectroscopy | - |
dc.subject.keywordAuthor | coherent transport model | - |
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