Low-voltage organic light-emitting field-effect transistors using n-Dodecylphosphonic acid-passivated HfOx dielectrics
DC Field | Value | Language |
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dc.contributor.author | Kim, Dae-Kyu | - |
dc.contributor.author | Choi, Jong-Ho | - |
dc.date.accessioned | 2021-09-02T22:51:27Z | - |
dc.date.available | 2021-09-02T22:51:27Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2017-12 | - |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/81475 | - |
dc.description.abstract | In this paper, organic light-emitting field effect transistors (OLEFETs) operating at low voltages |V-op| below 10 V were first produced and characterized. n-Dodecylphosphonic acid (PA-C12)-self-assembled monolayer (SAM)-passivated HfOx dielectrics prepared using sol-gel chemistry decreased the device-operating voltages. Crystalline organic active layers of pentacene and N, N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) acted as p-and n-type materials, respectively. 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran doped onto a tris(8-hydroxyquinoline) aluminum (Alq(3):DCM) layer was used as a light-emitting medium to enhance the luminescence efficiency. Based on a tri-layered structure with balanced ambipolar transports and the combined high capacitance-low leakage current of the PA-C12-SAM-treated HfOx dielectrics, the OLEFETs demonstrated good device performance with light emission at |V-op| < 10 V. The transistor characteristics and operating light-emission mechanisms were discussed based on the EL images acquired using a charge-coupled device (CCD) camera under ambient conditions. (C) 2017 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | HIGH-MOBILITY | - |
dc.subject | HETEROJUNCTION | - |
dc.subject | PENTACENE | - |
dc.subject | PERFORMANCE | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | RECOMBINATION | - |
dc.subject | FABRICATION | - |
dc.subject | TRANSPORT | - |
dc.subject | PERYLENE | - |
dc.title | Low-voltage organic light-emitting field-effect transistors using n-Dodecylphosphonic acid-passivated HfOx dielectrics | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, Jong-Ho | - |
dc.identifier.doi | 10.1016/j.orgel.2017.09.026 | - |
dc.identifier.scopusid | 2-s2.0-85029708503 | - |
dc.identifier.wosid | 000418101600036 | - |
dc.identifier.bibliographicCitation | ORGANIC ELECTRONICS, v.51, pp.287 - 294 | - |
dc.relation.isPartOf | ORGANIC ELECTRONICS | - |
dc.citation.title | ORGANIC ELECTRONICS | - |
dc.citation.volume | 51 | - |
dc.citation.startPage | 287 | - |
dc.citation.endPage | 294 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordPlus | HETEROJUNCTION | - |
dc.subject.keywordPlus | PENTACENE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | RECOMBINATION | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | PERYLENE | - |
dc.subject.keywordAuthor | Organic light-emitting field effect transistors (OLEFETs) | - |
dc.subject.keywordAuthor | Low voltages operation | - |
dc.subject.keywordAuthor | n-Dodecylphosphonic acid (PA-C12) | - |
dc.subject.keywordAuthor | Operating lightemission mechanisms | - |
dc.subject.keywordAuthor | HfOx dielectrics | - |
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