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Photon-triggered nanowire transistors

Authors
Kim, JungkilLee, Hoo-CheolKim, Kyoung-HoHwang, Min-SooPark, Jin-SungLee, Jung MinSo, Jae-PilChoi, Jae-HyuckKwon, Soon-HongBarrelet, Carl J.Park, Hong-Gyu
Issue Date
10월-2017
Publisher
NATURE PUBLISHING GROUP
Citation
NATURE NANOTECHNOLOGY, v.12, no.10, pp.963 - 968
Indexed
SCIE
SCOPUS
Journal Title
NATURE NANOTECHNOLOGY
Volume
12
Number
10
Start Page
963
End Page
968
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/82131
DOI
10.1038/NNANO.2017.153
ISSN
1748-3387
Abstract
Photon-triggered electronic circuits have been a long-standing goal of photonics. Recent demonstrations include either alloptical transistors in which photons control other photons(1,2) or phototransistors with the gate response tuned or enhanced by photons(3-5). However, only a few studies report on devices in which electronic currents are optically switched and amplified without an electrical gate. Here we show photon-triggered nanowire (NW) transistors, photon-triggered NW logic gates and a single NW photodetection system. NWs are synthesized with long crystalline silicon (CSi) segments connected by short porous silicon (PSi) segments. In a fabricated device, the electrical contacts on both ends of the NW are connected to a single PSi segment in the middle. Exposing the PSi segment to light triggers a current in the NW with a high on/off ratio of >8 x 10(6). A device that contains two PSi segments along the NW can be triggered using two independent optical input signals. Using localized pump lasers, we demonstrate photon-triggered logic gates including AND, OR and NAND gates. A photon-triggered NW transistor of diameter 25 nm with a single 100 nm PSi segment requires less than 300 pW of power. Furthermore, we take advantage of the high photosensitivity and fabricate a submicrometre-resolution photodetection system. Photon-triggered transistors offer a new venue towards multifunctional device applications such as programmable logic elements and ultrasensitive photodetectors.
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