Ta-Doped SnO2 as a reduction-resistant oxide electrode for DRAM capacitors
DC Field | Value | Language |
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dc.contributor.author | Cho, Cheol Jin | - |
dc.contributor.author | Noh, Myoung-Sub | - |
dc.contributor.author | Lee, Woo Chul | - |
dc.contributor.author | An, Cheol Hyun | - |
dc.contributor.author | Kang, Chong-Yun | - |
dc.contributor.author | Hwang, Cheol Seong | - |
dc.contributor.author | Kim, Seong Keun | - |
dc.date.accessioned | 2021-09-03T01:04:29Z | - |
dc.date.available | 2021-09-03T01:04:29Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2017-09-28 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/82182 | - |
dc.description.abstract | Noble metal oxides, such as RuO2, have received attention as capacitor electrodes in dynamic random access memories (DRAMs). Noble metal oxides generally have a high work function compared to noble metals and enhance the crystallinity of dielectric materials grown on them, resulting in a lower leakage current and higher dielectric constants. Despite these advantages, noble metal oxides are easily reduced during the dielectric film, such as TiO2, growth on top or by annealing under a forming gas atmosphere, degrading the capacitor performance. In this work, Ta-doped SnO2 is suggested as a potential capacitor electrode for DRAMs. Ta-Doped SnO2 films have a high work function, comparable to that of RuO2, and induce the formation of a high-temperature phase with a high dielectric constant, namely rutile TiO2, at low temperatures. More importantly, the Ta-doped SnO2 films show suitable structural and chemical stabilities, even after annealing at 400 degrees C under a forming gas atmosphere. RuO2 films, on the other hand, turn into a mixture of RuO2 and Ru after annealing under the same conditions. These findings suggest that Ta-doped SnO2 could serve as capacitor electrodes in next-generation DRAMs. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | ATOMIC-LAYER DEPOSITION | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | THIN-FILMS | - |
dc.subject | TIO2 FILMS | - |
dc.subject | RUTHENIUM OXIDE | - |
dc.subject | RU ELECTRODE | - |
dc.subject | GROWTH | - |
dc.subject | PRECURSOR | - |
dc.subject | REACTANT | - |
dc.subject | MEMORY | - |
dc.title | Ta-Doped SnO2 as a reduction-resistant oxide electrode for DRAM capacitors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kang, Chong-Yun | - |
dc.identifier.doi | 10.1039/c7tc03467a | - |
dc.identifier.scopusid | 2-s2.0-85029836846 | - |
dc.identifier.wosid | 000411662700022 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY C, v.5, no.36, pp.9405 - 9411 | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.volume | 5 | - |
dc.citation.number | 36 | - |
dc.citation.startPage | 9405 | - |
dc.citation.endPage | 9411 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ATOMIC-LAYER DEPOSITION | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | TIO2 FILMS | - |
dc.subject.keywordPlus | RUTHENIUM OXIDE | - |
dc.subject.keywordPlus | RU ELECTRODE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | PRECURSOR | - |
dc.subject.keywordPlus | REACTANT | - |
dc.subject.keywordPlus | MEMORY | - |
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