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Effect of Al composition and V/III ratio of AlGaN on GaN for distributed Bragg reflector
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jeong, Woo Seop | - |
| dc.contributor.author | Kim, Dae-sik | - |
| dc.contributor.author | Park, Junsung | - |
| dc.contributor.author | Cho, Seung Hee | - |
| dc.contributor.author | Kim, Cheol | - |
| dc.contributor.author | Byun, Dongjin | - |
| dc.date.accessioned | 2021-09-03T02:39:59Z | - |
| dc.date.available | 2021-09-03T02:39:59Z | - |
| dc.date.created | 2021-06-16 | - |
| dc.date.issued | 2017-09 | - |
| dc.identifier.issn | 0374-4884 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/82480 | - |
| dc.description.abstract | In this study, we have deposited the AlGaN thin films for distributdd Bragg reflector (DBR). We investigated effects of Al content (18.0% similar to 47.2%) and III/V ratio (1437 4792) on AlGaN thin film. We analyzed image of grown AlGaN epi-layer by FE-SEM. There are different growth behaviors depending on III/V ratio under the greatest Al contents. Therefore, we optimized the AlGaN epi-layer growth conditions that have the highest Al content and adjusted III/V ratio. Also, AlGaN thin films were analyzed. Finally, we fabricated DBR using optimized AlGaN epi-layer and characterized the optical properties and surface morphology. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | KOREAN PHYSICAL SOC | - |
| dc.subject | GROWTH | - |
| dc.subject | TEMPERATURE | - |
| dc.subject | ALXGA1-XN | - |
| dc.title | Effect of Al composition and V/III ratio of AlGaN on GaN for distributed Bragg reflector | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Byun, Dongjin | - |
| dc.identifier.doi | 10.3938/jkps.71.345 | - |
| dc.identifier.scopusid | 2-s2.0-85029621680 | - |
| dc.identifier.wosid | 000411026300007 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.71, no.6, pp.345 - 348 | - |
| dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
| dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
| dc.citation.volume | 71 | - |
| dc.citation.number | 6 | - |
| dc.citation.startPage | 345 | - |
| dc.citation.endPage | 348 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.identifier.kciid | ART002263024 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
| dc.subject.keywordPlus | GROWTH | - |
| dc.subject.keywordPlus | TEMPERATURE | - |
| dc.subject.keywordPlus | ALXGA1-XN | - |
| dc.subject.keywordAuthor | AlGaN | - |
| dc.subject.keywordAuthor | GaN | - |
| dc.subject.keywordAuthor | III/V ratio | - |
| dc.subject.keywordAuthor | Composition | - |
| dc.subject.keywordAuthor | DBR | - |
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