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Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage

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dc.contributor.authorKang, Dong-Ho-
dc.contributor.authorChoi, Woo-Young-
dc.contributor.authorWoo, Hyunsuk-
dc.contributor.authorJang, Sungkyu-
dc.contributor.authorPark, Hyung-Youl-
dc.contributor.authorShim, Jaewoo-
dc.contributor.authorChoi, Jae-Woong-
dc.contributor.authorKim, Sungho-
dc.contributor.authorJeon, Sanghun-
dc.contributor.authorLee, Sungjoo-
dc.contributor.authorPark, Jin-Hong-
dc.date.accessioned2021-09-03T02:59:27Z-
dc.date.available2021-09-03T02:59:27Z-
dc.date.created2021-06-16-
dc.date.issued2017-08-16-
dc.identifier.issn1944-8244-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/82547-
dc.description.abstractIn this study, we demonstrate a high-performance solid polymer electrolyte (SPE) atomic switching device with low SET/RESET voltages (0.25 and -0.5 V, respectively), high on/off-current ratio (10(5)), excellent cyclic endurance (>10(3)), and long retention time (>10(4) s), where poly-4-vinylphenol (PVP)/poly(rnelamine-co-formaldehyde) (PMF) is used as an SPE layer. To accomplish these excellent device performance parameters, we reduce the off-current level of the PVP/PMF atomic switching device by improving, the electrical insulating property of the PVP/PMF electrolyte through adjustment of the number of cross-linked chains. We then apply a titanium buffer layer to the PVP/PMF switching device for further improvement of bipolar switching behavior and device stability. In addition, we first implement SPE atomic switch-based logic AND and OR circuits with low operating voltages below 2 V by integrating 5 X 5 arrays of PVP/PMF switching devices on the flexible substrate. In particular, this low operating voltage of our logic circuits was much lower than that (>5 V), of the circuits configured by polymer resistive random access memory. This research successfully presents the feasibility of PVP/PMF atomic switches for flexible integrated circuits for next generation electronic applications.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherAMER CHEMICAL SOC-
dc.subjectTHIN-FILMS-
dc.subjectMEMORY-
dc.subjectRETENTION-
dc.subjectMECHANISM-
dc.titlePoly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage-
dc.typeArticle-
dc.contributor.affiliatedAuthorJeon, Sanghun-
dc.identifier.doi10.1021/acsami.7b07549-
dc.identifier.scopusid2-s2.0-85027414416-
dc.identifier.wosid000408178400047-
dc.identifier.bibliographicCitationACS APPLIED MATERIALS & INTERFACES, v.9, no.32, pp.27073 - 27082-
dc.relation.isPartOfACS APPLIED MATERIALS & INTERFACES-
dc.citation.titleACS APPLIED MATERIALS & INTERFACES-
dc.citation.volume9-
dc.citation.number32-
dc.citation.startPage27073-
dc.citation.endPage27082-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordPlusRETENTION-
dc.subject.keywordPlusMECHANISM-
dc.subject.keywordAuthoratomic switch-
dc.subject.keywordAuthorPVP/PMF-
dc.subject.keywordAuthormetal buffer-
dc.subject.keywordAuthorlow-voltage device-
dc.subject.keywordAuthorlow-voltage circuit-
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