Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage
DC Field | Value | Language |
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dc.contributor.author | Kang, Dong-Ho | - |
dc.contributor.author | Choi, Woo-Young | - |
dc.contributor.author | Woo, Hyunsuk | - |
dc.contributor.author | Jang, Sungkyu | - |
dc.contributor.author | Park, Hyung-Youl | - |
dc.contributor.author | Shim, Jaewoo | - |
dc.contributor.author | Choi, Jae-Woong | - |
dc.contributor.author | Kim, Sungho | - |
dc.contributor.author | Jeon, Sanghun | - |
dc.contributor.author | Lee, Sungjoo | - |
dc.contributor.author | Park, Jin-Hong | - |
dc.date.accessioned | 2021-09-03T02:59:27Z | - |
dc.date.available | 2021-09-03T02:59:27Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2017-08-16 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/82547 | - |
dc.description.abstract | In this study, we demonstrate a high-performance solid polymer electrolyte (SPE) atomic switching device with low SET/RESET voltages (0.25 and -0.5 V, respectively), high on/off-current ratio (10(5)), excellent cyclic endurance (>10(3)), and long retention time (>10(4) s), where poly-4-vinylphenol (PVP)/poly(rnelamine-co-formaldehyde) (PMF) is used as an SPE layer. To accomplish these excellent device performance parameters, we reduce the off-current level of the PVP/PMF atomic switching device by improving, the electrical insulating property of the PVP/PMF electrolyte through adjustment of the number of cross-linked chains. We then apply a titanium buffer layer to the PVP/PMF switching device for further improvement of bipolar switching behavior and device stability. In addition, we first implement SPE atomic switch-based logic AND and OR circuits with low operating voltages below 2 V by integrating 5 X 5 arrays of PVP/PMF switching devices on the flexible substrate. In particular, this low operating voltage of our logic circuits was much lower than that (>5 V), of the circuits configured by polymer resistive random access memory. This research successfully presents the feasibility of PVP/PMF atomic switches for flexible integrated circuits for next generation electronic applications. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | THIN-FILMS | - |
dc.subject | MEMORY | - |
dc.subject | RETENTION | - |
dc.subject | MECHANISM | - |
dc.title | Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Sanghun | - |
dc.identifier.doi | 10.1021/acsami.7b07549 | - |
dc.identifier.scopusid | 2-s2.0-85027414416 | - |
dc.identifier.wosid | 000408178400047 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.9, no.32, pp.27073 - 27082 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 9 | - |
dc.citation.number | 32 | - |
dc.citation.startPage | 27073 | - |
dc.citation.endPage | 27082 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | RETENTION | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordAuthor | atomic switch | - |
dc.subject.keywordAuthor | PVP/PMF | - |
dc.subject.keywordAuthor | metal buffer | - |
dc.subject.keywordAuthor | low-voltage device | - |
dc.subject.keywordAuthor | low-voltage circuit | - |
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