A Thermally Stable NiZn/Ta/Ni Scheme to Replace AuBe/Au Contacts in High-Efficiency AlGaInP-Based Light-Emitting Diodes
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Dae-Hyun | - |
dc.contributor.author | Park, Jae-Seong | - |
dc.contributor.author | Kang, Daesung | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-03T03:17:03Z | - |
dc.date.available | 2021-09-03T03:17:03Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2017-08 | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/82625 | - |
dc.description.abstract | We developed NiZn/(Ta/)Ni ohmic contacts to replace expensive AuBe/Au contacts commonly used in high-efficiency AlGaInP-based light-emitting diodes (LEDs), and compared the electrical properties of the two contact types. Unlike the AuBe/Au (130 nm/100 nm) contact, the NiZn/Ta/Ni (130 nm/20 nm/100 nm) contact shows improved electrical properties after being annealed at 500A degrees C, with a contact resistivity of 5.2 x 10(-6) Omega cm(2). LEDs with the NiZn/Ta/Ni contact exhibited a 4.4% higher output power (at 250 mW) than LEDs with the AuBe/Au contact. In contrast to the trend for the AuBe/Au contact, the Ga 2p core level for the NiZn/Ta/Ni contact shifted toward lower binding energies after being annealed at 500A degrees C. Auger electron spectroscopy (AES) depth profiles showed that annealing the AuBe/Au samples caused the outdiffusion of both Be and P atoms into the metal contact, whereas in the NiZn/Ta/Ni samples, Zn atoms indiffused into the GaP layer. The annealing-induced electrical degradation and ohmic contact formation mechanisms are described and discussed on the basis of the results of x-ray photoemission spectroscopy and AES. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.subject | P-TYPE GAP | - |
dc.subject | CURRENT-SPREADING LAYER | - |
dc.subject | TIN-OXIDE ITO | - |
dc.subject | OHMIC CONTACTS | - |
dc.subject | GALLIUM-PHOSPHIDE | - |
dc.subject | HEAT-TREATMENT | - |
dc.subject | THIN-FILM | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | LEDS | - |
dc.subject | MECHANISM | - |
dc.title | A Thermally Stable NiZn/Ta/Ni Scheme to Replace AuBe/Au Contacts in High-Efficiency AlGaInP-Based Light-Emitting Diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1007/s11664-017-5406-z | - |
dc.identifier.scopusid | 2-s2.0-85014678709 | - |
dc.identifier.wosid | 000404530900008 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ELECTRONIC MATERIALS, v.46, no.8, pp.4750 - 4754 | - |
dc.relation.isPartOf | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.citation.title | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.citation.volume | 46 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 4750 | - |
dc.citation.endPage | 4754 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | P-TYPE GAP | - |
dc.subject.keywordPlus | CURRENT-SPREADING LAYER | - |
dc.subject.keywordPlus | TIN-OXIDE ITO | - |
dc.subject.keywordPlus | OHMIC CONTACTS | - |
dc.subject.keywordPlus | GALLIUM-PHOSPHIDE | - |
dc.subject.keywordPlus | HEAT-TREATMENT | - |
dc.subject.keywordPlus | THIN-FILM | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | LEDS | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordAuthor | Ohmic contact | - |
dc.subject.keywordAuthor | NiZn solid solution | - |
dc.subject.keywordAuthor | light-emitting diode | - |
dc.subject.keywordAuthor | AlGaInP | - |
dc.subject.keywordAuthor | x-ray photoemission spectroscopy | - |
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