Improved light output power of GaN-based ultraviolet light-emitting diode using a mesh-type GaN/SiO2/Al omnidirectional reflector
DC Field | Value | Language |
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dc.contributor.author | Won, Jun-Youn | - |
dc.contributor.author | Kim, Dae-Hyun | - |
dc.contributor.author | Kang, Daesung | - |
dc.contributor.author | Sung, Jun-Suk | - |
dc.contributor.author | Kim, Da-Som | - |
dc.contributor.author | Kim, Sun-Kyung | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-03T03:35:27Z | - |
dc.date.available | 2021-09-03T03:35:27Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2017-08 | - |
dc.identifier.issn | 1862-6300 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/82731 | - |
dc.description.abstract | We investigated the effect of a mesh-type GaN/SiO2/Al omnidirectional reflector (ODR) on the light output power of AlGaN/InGaN-based ultraviolet (365nm) LEDs and compared their performance with that of LEDs with a GaN/ITO/Al reflector. Using the scattering matrix method, the normal incidence reflectance was calculated to be 93.7% for the GaN/SiO2 (62nm)/Al ODR and 79% for the GaN/ITO (30nm)/Al reflector. The Ag/Ni/Al/Ni (52nm/10nm/200nm/20nm) contact showed a specific contact resistance of 3.2x10(-5)cm(2) after annealing at 500 degrees C for 1min. The forward-bias voltages at 20mA of LEDs with ODR were in the range of 3.49-3.54V, which were similar to that of LEDs with an ITO/Al reflector (3.51V). The LEDs with ODR had series resistances in the range of 14.8-12.5, whereas the LED with an ITO/Al reflector showed 11.7. The LEDs with ODR yielded 9.3-19.9% higher light output power at 20mA than the LED with an ITO/Al reflector. The improved light output power was attributed to the optimization of the high reflectance of the ODR (reflective area) and contact area. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.subject | P-TYPE GAN | - |
dc.subject | OHMIC CONTACTS | - |
dc.subject | LOW-RESISTANCE | - |
dc.subject | THERMAL-STABILITY | - |
dc.subject | LAYER | - |
dc.title | Improved light output power of GaN-based ultraviolet light-emitting diode using a mesh-type GaN/SiO2/Al omnidirectional reflector | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1002/pssa.201600789 | - |
dc.identifier.scopusid | 2-s2.0-85017237168 | - |
dc.identifier.wosid | 000407683800003 | - |
dc.identifier.bibliographicCitation | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.214, no.8 | - |
dc.relation.isPartOf | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.citation.title | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.citation.volume | 214 | - |
dc.citation.number | 8 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | P-TYPE GAN | - |
dc.subject.keywordPlus | OHMIC CONTACTS | - |
dc.subject.keywordPlus | LOW-RESISTANCE | - |
dc.subject.keywordPlus | THERMAL-STABILITY | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordAuthor | aluminum | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | light extraction | - |
dc.subject.keywordAuthor | light-emitting diodes | - |
dc.subject.keywordAuthor | omnidirectional reflectors | - |
dc.subject.keywordAuthor | SiO2 | - |
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