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Effects of Plasma Enhanced Chemical Vapor Deposition Radio Frequency on the Properties of SiNx:H Films

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dc.contributor.authorLee, Kyung Dong-
dc.contributor.authorJi, Kwang-Sun-
dc.contributor.authorBae, Soohyun-
dc.contributor.authorKim, Seongtak-
dc.contributor.authorKim, Hyunho-
dc.contributor.authorKim, Jae Eun-
dc.contributor.authorNam, Yoon Chung-
dc.contributor.authorChoi, Sungjin-
dc.contributor.authorJeong, Myeong Sang-
dc.contributor.authorKang, Min Gu-
dc.contributor.authorSong, Hee-Eun-
dc.contributor.authorKang, Yoonmook-
dc.contributor.authorLee, Hae-Seok-
dc.contributor.authorKim, Donghwan-
dc.date.accessioned2021-09-03T04:37:39Z-
dc.date.available2021-09-03T04:37:39Z-
dc.date.created2021-06-16-
dc.date.issued2017-07-
dc.identifier.issn1533-4880-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/83015-
dc.description.abstractHydrogenated silicon nitride (SiNx:H) films were fabricated using plasma-enhanced chemical vapor deposition at high (13.56 MHz), low (400 kHz), and dual (13.56 MHz+400 kHz) radio frequencies. The antireflection and passivation qualities of each film were investigated before their application as the front surface layer of crystalline silicon solar cells. The use of a high radio frequency was observed to have a positive effect on the cell performance, which increased by 0.4% in comparison with the minimum value obtained for a 156 mm x 156 mm cell.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherAMER SCIENTIFIC PUBLISHERS-
dc.subjectSILICON-NITRIDE-
dc.subjectSURFACE PASSIVATION-
dc.subjectINTERFACE-
dc.titleEffects of Plasma Enhanced Chemical Vapor Deposition Radio Frequency on the Properties of SiNx:H Films-
dc.typeArticle-
dc.contributor.affiliatedAuthorKang, Yoonmook-
dc.contributor.affiliatedAuthorLee, Hae-Seok-
dc.contributor.affiliatedAuthorKim, Donghwan-
dc.identifier.doi10.1166/jnn.2017.14272-
dc.identifier.scopusid2-s2.0-85018357373-
dc.identifier.wosid000402487200035-
dc.identifier.bibliographicCitationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.7, pp.4687 - 4693-
dc.relation.isPartOfJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.citation.titleJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.citation.volume17-
dc.citation.number7-
dc.citation.startPage4687-
dc.citation.endPage4693-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusSILICON-NITRIDE-
dc.subject.keywordPlusSURFACE PASSIVATION-
dc.subject.keywordPlusINTERFACE-
dc.subject.keywordAuthorSilicon Nitride-
dc.subject.keywordAuthorPlasma-Enhanced Chemical Vapor Deposition Frequency-
dc.subject.keywordAuthorPassivation-
dc.subject.keywordAuthorSilicon Solar Cell-
dc.subject.keywordAuthorSurface Damage-
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Graduate School of Energy and Environment (KU-KIST GREEN SCHOOL) > Department of Energy and Environment > 1. Journal Articles
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