Impact of Metal Nitrides on Contact Resistivity of Metal-Interlayer-Semiconductor Source/Drain in Sub-14 nm n-Type Si FinFET
DC Field | Value | Language |
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dc.contributor.author | Ahn, Juhan | - |
dc.contributor.author | Kim, Jeong-Kyu | - |
dc.contributor.author | Kim, Jong-Kook | - |
dc.contributor.author | Kim, Jinok | - |
dc.contributor.author | Park, Jin-Hong | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.date.accessioned | 2021-09-03T06:36:47Z | - |
dc.date.available | 2021-09-03T06:36:47Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2017-05 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/83562 | - |
dc.description.abstract | In this work, a metal nitride interlayer semiconductor (MN-I-S) source/drain (S/D) model is suggested to investigate the effect of titanium nitride (TiN) and tantalum nitride (TaN) on the specific contact resistivity (rho(c)) of an MN-I-S S/D structure in a sub-14 nm n-type Si FinFET. The work function (WF) variation of TiN and TaN was considered based on a Rayleigh distribution. In this model, an undoped interlayer (undoped-IL) or heavily doped interlayer (n(+)-IL) were included to identify the effect of IL doping on rho(c). The structure with an n+-IL provides a very low variation in rho(c) as well as lower rho(c) values (i.e., similar to 4 x 10(-9) Omega.cm(2)). By using three-dimensional technology computer-aided design (TCAD) simulation, we also investigated the impact of rho(c) variation on device performance. The MN-I-S S/D with an n(+)-IL showed a higher on-state drive current with highly suppressed variation. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | WORK-FUNCTION VARIATION | - |
dc.subject | INTERFACIAL LAYER | - |
dc.title | Impact of Metal Nitrides on Contact Resistivity of Metal-Interlayer-Semiconductor Source/Drain in Sub-14 nm n-Type Si FinFET | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jong-Kook | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1166/jnn.2017.14051 | - |
dc.identifier.scopusid | 2-s2.0-85015389883 | - |
dc.identifier.wosid | 000397855000034 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp.3084 - 3088 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 17 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 3084 | - |
dc.citation.endPage | 3088 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | WORK-FUNCTION VARIATION | - |
dc.subject.keywordPlus | INTERFACIAL LAYER | - |
dc.subject.keywordAuthor | FinFET | - |
dc.subject.keywordAuthor | Specific Contact Resistivity | - |
dc.subject.keywordAuthor | Tantalum Nitride | - |
dc.subject.keywordAuthor | Titanium Nitride | - |
dc.subject.keywordAuthor | Variation | - |
dc.subject.keywordAuthor | Zinc Oxide | - |
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