Determination of intrinsic mobility of a bilayer oxide thin-film transistor by pulsed I-V method
DC Field | Value | Language |
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dc.contributor.author | Woo, Hyunsuk | - |
dc.contributor.author | Kim, Taeho | - |
dc.contributor.author | Hur, Jihyun | - |
dc.contributor.author | Jeon, Sanghun | - |
dc.date.accessioned | 2021-09-03T07:03:36Z | - |
dc.date.available | 2021-09-03T07:03:36Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2017-04-28 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/83716 | - |
dc.description.abstract | Amorphous oxide semiconductor thin-film transistors (TFT) have been considered as outstanding switch devices owing to their high mobility. However, because of their amorphous channel material with a certain level of density of states, a fast transient charging effect in an oxide TFT occurs, leading to an underestimation of the mobility value. In this paper, the effects of the fast charging of high-performance bilayer oxide semiconductor TFTs on mobility are examined in order to determine an accurate mobility extraction method. In addition, an approach based on a pulse I-D-V-G measurement method is proposed to determine the intrinsic mobility value. Even with the short pulse I-D-V-G measurement, a certain level of fast transient charge trapping cannot be avoided as long as the charge-trap start time is shorter than the pulse rising time. Using a pulse-amplitude-dependent threshold voltage characterization method, we estimated a correction factor for the apparent mobility, thus allowing us to determine the intrinsic mobility. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | ELECTRON-TRAPPING CHARACTERIZATION | - |
dc.subject | CARRIER TRANSPORT | - |
dc.subject | GATE DIELECTRICS | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | PERFORMANCE | - |
dc.title | Determination of intrinsic mobility of a bilayer oxide thin-film transistor by pulsed I-V method | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Sanghun | - |
dc.identifier.doi | 10.1088/1361-6528/aa651c | - |
dc.identifier.scopusid | 2-s2.0-85017555591 | - |
dc.identifier.wosid | 000398258200001 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.28, no.17 | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 28 | - |
dc.citation.number | 17 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ELECTRON-TRAPPING CHARACTERIZATION | - |
dc.subject.keywordPlus | CARRIER TRANSPORT | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordAuthor | amorphous | - |
dc.subject.keywordAuthor | nanocrystalline | - |
dc.subject.keywordAuthor | oxide semiconductor | - |
dc.subject.keywordAuthor | thin film transistor | - |
dc.subject.keywordAuthor | charge trapping | - |
dc.subject.keywordAuthor | fast transient charging | - |
dc.subject.keywordAuthor | mobility | - |
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