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Dissolution Behaviors and Applications of Silicon Oxides and Nitrides in Transient Electronics
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | SukWon Hwang | - |
| dc.date.accessioned | 2021-09-03T07:34:14Z | - |
| dc.date.available | 2021-09-03T07:34:14Z | - |
| dc.date.created | 2021-06-21 | - |
| dc.date.issued | 2014-07 | - |
| dc.identifier.issn | 1616301X | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/83867 | - |
| dc.description.abstract | Silicon oxides and nitrides are key materials for dielectrics and encapsulation layers in a class of silicon-based high performance electronics that has ability to completely dissolve in a controlled fashion with programmable rates, when submerged in bio-fluids and/or relevant solutions. This type of technology, referred to as | - |
| dc.publisher | WILEY-V C H VERLAG GMBH | - |
| dc.title | Dissolution Behaviors and Applications of Silicon Oxides and Nitrides in Transient Electronics | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | SukWon Hwang | - |
| dc.identifier.doi | 10.1002/adfm.201304293 | - |
| dc.identifier.bibliographicCitation | ADVANCED FUNCTIONAL MATERIALS, v.24, no.28, pp.4427 - 4434 | - |
| dc.relation.isPartOf | ADVANCED FUNCTIONAL MATERIALS | - |
| dc.citation.title | ADVANCED FUNCTIONAL MATERIALS | - |
| dc.citation.volume | 24 | - |
| dc.citation.number | 28 | - |
| dc.citation.startPage | 4427 | - |
| dc.citation.endPage | 4434 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
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