In Situ Repair of High-Performance, Flexible Nanocrystal Electronics for Large-Area Fabrication and Operation in Air
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Soong Ju Oh | - |
dc.date.accessioned | 2021-09-03T07:37:11Z | - |
dc.date.available | 2021-09-03T07:37:11Z | - |
dc.date.created | 2021-06-21 | - |
dc.date.issued | 2013-09 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/83892 | - |
dc.description.abstract | Colloidal semiconductor nanoaystal (NC) thin films have been integrated in light-emitting diodes, solar cells, field-effect transistors (FETs), and flexible, electronic circuits. However, NC devices are typically fabricated and operated in an inert environment since the reactive surface and high surface-to-volume ratio of NC materials render them sensitive to oxygen, water, and many solvents. This sensitivity has limited device scaling and large-scale device integration achievable by conventional fabrication technologies, which generally require ambient air and wet-chemical processing. Here, we present a simple, effective route to reverse the detrimental effects of chemical and environmental exposure, by incorporating, in situ, a chemical agent, namely, indium metal, which is thermally triggered to diffuse and repair the damage. Taking advantage of the recovery process, CdSe NC FETs are processed in air, patterned using the solvents of lithography, and packaged by atomic layer deposition to form large-area and flexible high-performance NC devices that operate stably in air. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | In Situ Repair of High-Performance, Flexible Nanocrystal Electronics for Large-Area Fabrication and Operation in Air | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Soong Ju Oh | - |
dc.identifier.doi | 10.1021/nn403752d | - |
dc.identifier.bibliographicCitation | ACS NANO, v.7, no.9, pp.8275 - 8283 | - |
dc.relation.isPartOf | ACS NANO | - |
dc.citation.title | ACS NANO | - |
dc.citation.volume | 7 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 8275 | - |
dc.citation.endPage | 8283 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | cadmium selenide | - |
dc.subject.keywordAuthor | recovery | - |
dc.subject.keywordAuthor | encapsulation | - |
dc.subject.keywordAuthor | field-effect transistor | - |
dc.subject.keywordAuthor | flexible electronics | - |
dc.subject.keywordAuthor | nanocrystal | - |
dc.subject.keywordAuthor | passivation | - |
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