Negative Capacitance FinFET With Sub-20-mV/decade Subthreshold Slope and Minimal Hysteresis of 0.48 V

Abstract

In this letter, an n-type short-channel negative capacitance FinFET (NC-FinFET) with a hysteresis window of 0.48 V, an on-/off-current ratio of 10(7), and a sub20- mV/decade average subthreshold slope (SSavg) that is intended to overcome the Boltzmann limit (i. e., the physical limit in the SS, which is 60 mV/decade at 300 K), is experimentally demonstrated vs. a baseline FinFET with an SSavg of similar to 105 mV/decade. In our testing, we confirmed that the large hysteresis window in a short-channel NC-FinFET can be suppressed by using an appropriate source/drain extension length (L-ext). As Lext in the NC-FinFET is increased, the gate-to-source/drain capacitance (C-GS/C-GD) decreased and the hysteresis window narrows.