Improvement of the light output of AlGaInP-based light-emitting diode by employing highly transparent Au/ITO p-type electrode
DC Field | Value | Language |
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dc.contributor.author | Choi, Byoungjun | - |
dc.contributor.author | Kim, Dae-Hyun | - |
dc.contributor.author | Kang, Daesung | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-03T08:12:22Z | - |
dc.date.available | 2021-09-03T08:12:22Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2017-03-30 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/84096 | - |
dc.description.abstract | We report on the development of highly transparent and low resistance Au/ITO ohmic contacts on a p-GaP window layer for AIGaInP-based light-emitting diodes (LEDs). When annealed at 400 degrees C, the Au/ITO (20/40 nm) contacts showed a specific contact resistance of 4.4 x 10(-4) Omega cm(2), which is comparable to that of conventional AuBe/Au (130 nm/100 nm) contacts. At 617 nm, the AuBe/Au film was opaque, while the Au/ITO films had transmittances of 63.3-92.8%. The Au/ITO films exhibited low sheet resistances of 1.4 -5.1 Omega/sq. LEDs fabricated with the Au/ITO electrodes gave forward voltages of 2.07-2.18 at 20 mA, which is comparable to that of the AuBe/Au contact (2.06 V). The LEDs with the Au/ITO electrode showed 9.8-46.1% higher light output power at 100 mA than that with the AuBe/Au electrode. On the basis of the X-ray photoemission spectroscopy (XPS) and scanning transmission electron microscopy (STEM) results, the annealing-induced electrical improvement is described and discussed. (C) 2016 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | III-V-SEMICONDUCTORS | - |
dc.subject | OHMIC CONTACT | - |
dc.subject | BARRIER LAYER | - |
dc.subject | WORK FUNCTION | - |
dc.subject | GAP | - |
dc.subject | EFFICIENCY | - |
dc.subject | SURFACE | - |
dc.subject | PHOSPHIDE | - |
dc.subject | OXIDE | - |
dc.subject | LEDS | - |
dc.title | Improvement of the light output of AlGaInP-based light-emitting diode by employing highly transparent Au/ITO p-type electrode | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1016/j.jallcom.2016.12.211 | - |
dc.identifier.scopusid | 2-s2.0-85009354441 | - |
dc.identifier.wosid | 000393727500157 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.699, pp.1180 - 1185 | - |
dc.relation.isPartOf | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 699 | - |
dc.citation.startPage | 1180 | - |
dc.citation.endPage | 1185 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | III-V-SEMICONDUCTORS | - |
dc.subject.keywordPlus | OHMIC CONTACT | - |
dc.subject.keywordPlus | BARRIER LAYER | - |
dc.subject.keywordPlus | WORK FUNCTION | - |
dc.subject.keywordPlus | GAP | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | PHOSPHIDE | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | LEDS | - |
dc.subject.keywordAuthor | Au/ITO | - |
dc.subject.keywordAuthor | Transparency | - |
dc.subject.keywordAuthor | Ohmic contact | - |
dc.subject.keywordAuthor | Light-emitting diode | - |
dc.subject.keywordAuthor | Electrode | - |
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