Performance optimization in gate-tunable Schottky junction solar cells with a light transparent and electric-field permeable graphene mesh on n-Si
DC Field | Value | Language |
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dc.contributor.author | Kim, Su Han | - |
dc.contributor.author | Lee, Jae Hyung | - |
dc.contributor.author | Park, Jin-Sung | - |
dc.contributor.author | Hwang, Min-Soo | - |
dc.contributor.author | Park, Hong-Gyu | - |
dc.contributor.author | Choi, Kyoung Jin | - |
dc.contributor.author | Park, Won Il | - |
dc.date.accessioned | 2021-09-03T08:13:23Z | - |
dc.date.available | 2021-09-03T08:13:23Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2017-03-28 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/84102 | - |
dc.description.abstract | Gate-tunable Schottky junction solar cells (SJSCs) based on graphene and graphene mesh electrodes on n-type Si are fabricated and the effect of the external gate voltage (V-g) on the photovoltaic characteristics is investigated. The power conversion efficiencies (PCEs) of both devices continuously increase with increasing absolute values of V-g. Importantly, despite the slightly lower PCE values at V-g = 0 V, the graphene mesh on Si SJSC shows more rapid enhancement of PCE values, from 5.7% to 8.1%, with V-g varied from 0 V to -1 V. The finite element simulation highlights the benefits of the graphene mesh electrodes from the non-uniform and dynamic modulation of potential distributions driven correlatively by a work function change in the graphene regions and electric-field penetration through the hole regions. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | INDUCED INVERSION LAYER | - |
dc.subject | ENHANCED EFFICIENCY | - |
dc.subject | TRANSISTORS | - |
dc.subject | OXIDE | - |
dc.subject | POWER | - |
dc.title | Performance optimization in gate-tunable Schottky junction solar cells with a light transparent and electric-field permeable graphene mesh on n-Si | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Hong-Gyu | - |
dc.identifier.doi | 10.1039/c6tc05502h | - |
dc.identifier.scopusid | 2-s2.0-85016109814 | - |
dc.identifier.wosid | 000397963500024 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY C, v.5, no.12, pp.3183 - 3187 | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.volume | 5 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 3183 | - |
dc.citation.endPage | 3187 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | INDUCED INVERSION LAYER | - |
dc.subject.keywordPlus | ENHANCED EFFICIENCY | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | POWER | - |
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