Using agglomerated Ag grid to improve the light output of near ultraviolet AlGaN-based light-emitting diode

Abstract

In this study, we introduced mesh-patterned Ag grid (width: 15-20 mu m) to enhance the light output power of near ultraviolet (385 nm) AlGaN-based light emitting diode (LEDs). The Ag grid was intentionally agglomerated by annealing at 500 degrees C for 1 min in air. The output performance of AIGaN-based LEDs fabricated with Ag-grid/indium tin oxide (ITO) electrodes was compared with those with ITO electrode. At a wavelength of 385 nm, the samples had transmittances of 54.2-74.1%. LEDs with the Ag-grid/ITO contacts exhibited lower forward voltages of 3.32-3.57 Vat 20 mA than LED with the ITO electrode (3.64 V). The LEDs With the Ag-grid/ITO electrodes exhibited 15.6-15.9% higher light output (at 400 mW) than that with the ITO electrode. Based on finite-difference time-domain simulations, the improved output performance is briefly described and discussed. (C) 2016 Elsevier B.V. All rights reserved.