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Epitaxially Self-Assembled Alkane Layers for Graphene Electronics

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dc.contributor.authorYu, Young-Jun-
dc.contributor.authorLee, Gwan-Hyoung-
dc.contributor.authorChoi, Ji Il-
dc.contributor.authorShim, Yoon Su-
dc.contributor.authorLee, Chul-Ho-
dc.contributor.authorKang, Seok Ju-
dc.contributor.authorLee, Sunwoo-
dc.contributor.authorRim, Kwang Taeg-
dc.contributor.authorFlynn, George W.-
dc.contributor.authorHone, James-
dc.contributor.authorKim, Yong-Hoon-
dc.contributor.authorKim, Philip-
dc.contributor.authorNuckolls, Colin-
dc.contributor.authorAhn, Seokhoon-
dc.date.accessioned2021-09-03T09:39:23Z-
dc.date.available2021-09-03T09:39:23Z-
dc.date.created2021-06-16-
dc.date.issued2017-02-02-
dc.identifier.issn0935-9648-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/84475-
dc.description.abstractThe epitaxially grown alkane layers on graphene are prepared by a simple drop-casting method and greatly reduce the environmentally driven doping and charge impurities in graphene. Multiscale simulation studies show that this enhancement of charge homogeneity in graphene originates from the lifting of graphene from the SiO2 surface toward the well-ordered and rigid alkane selfassembled layers.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectBALLISTIC TRANSPORT-
dc.subjectRAMAN-SPECTROSCOPY-
dc.subjectMOBILITY-
dc.subjectPERFORMANCE-
dc.subjectGRAPHITE-
dc.subjectSTRAIN-
dc.subjectFILMS-
dc.titleEpitaxially Self-Assembled Alkane Layers for Graphene Electronics-
dc.typeArticle-
dc.contributor.affiliatedAuthorLee, Chul-Ho-
dc.identifier.doi10.1002/adma.201603925-
dc.identifier.scopusid2-s2.0-85006127991-
dc.identifier.wosid000396142100013-
dc.identifier.bibliographicCitationADVANCED MATERIALS, v.29, no.5-
dc.relation.isPartOfADVANCED MATERIALS-
dc.citation.titleADVANCED MATERIALS-
dc.citation.volume29-
dc.citation.number5-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusBALLISTIC TRANSPORT-
dc.subject.keywordPlusRAMAN-SPECTROSCOPY-
dc.subject.keywordPlusMOBILITY-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusGRAPHITE-
dc.subject.keywordPlusSTRAIN-
dc.subject.keywordPlusFILMS-
dc.subject.keywordAuthorgraphene-
dc.subject.keywordAuthormobility-
dc.subject.keywordAuthorpassivation-
dc.subject.keywordAuthorself-assembly-
dc.subject.keywordAuthorvan der Waals interaction-
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