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Low temperature firing and microwave dielectric properties of Bi4-xGe3O12-1.5x ceramics
- Issue Date
- 1-2월-2017
- Publisher
- ELSEVIER SCI LTD
- Keywords
- Bi(4-x)Ge(3)O(12-1.5x)ceramics; Bi2O3 deficiency; Low-temperature firing; Microwave dielectric properties
- Citation
- CERAMICS INTERNATIONAL, v.43, no.2, pp.2801 - 2806
- Indexed
- SCIE
SCOPUS
- Journal Title
- CERAMICS INTERNATIONAL
- Volume
- 43
- Number
- 2
- Start Page
- 2801
- End Page
- 2806
- ISSN
- 0272-8842
- Abstract
- Dense Bi4Ge3O12 ceramics sintered at 850 degrees C had a relative permittivity (epsilon(r)) of 15.7, temperature coefficient of resonant frequency (tau(f)) of 24.2 ppm/degrees C, and quality factor (Qxf) of 28,361 GHz. However, because of the existence of Bi12GeO20 as a secondary phase, the microwave dielectric properties of Bi4Ge3O12 would be degraded. Therefore, to avoid the formation of the Bi12GeO20 secondary phase, Bi2O3-deficient ceramics with 0.1<_x<_0.6 were sintered at 850 degrees C. A single phase of Bi3.6Ge3O11.4 (x=0.4) ceramic sintered at 850 degrees C for 5 h without any secondary phase exhibited suitable microwave dielectric properties for a ceramic substrate: epsilon(r)=14.9, tau(f) =-9.5 ppm/degrees C, and Qxf=53,277 GHz.
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