Potential induced degradation of n-type crystalline silicon solar cells with p(+) front junction
- Authors
- Bae, Soohyun; Oh, Wonwook; Lee, Kyung Dong; Kim, Seongtak; Kim, Hyunho; Park, Nochang; Chan, Sung-Il; Park, Sungeun; Kang, Yoonmook; Lee, Hae-Seok; Kim, Donghwan
- Issue Date
- 2월-2017
- Publisher
- WILEY
- Keywords
- Boron-doped emitter; n-type silicon solar cell; photovoltaic module; potential induced degradation; quantum efficiency
- Citation
- ENERGY SCIENCE & ENGINEERING, v.5, no.1, pp.30 - 37
- Indexed
- SCIE
SCOPUS
- Journal Title
- ENERGY SCIENCE & ENGINEERING
- Volume
- 5
- Number
- 1
- Start Page
- 30
- End Page
- 37
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/84514
- DOI
- 10.1002/ese3.146
- ISSN
- 2050-0505
- Abstract
- N-type silicon-based solar cells are currently being used for achieving high efficiency. However, most of the photovoltaic modules already constructed are based on p-type silicon solar cells, and there are few studies on potential induced degradation (PID) in n-type solar cells. In this study, we investigated PID in n-type silicon solar cells with a front p+ emitter. Further, the PID characteristics of n-type solar cells are compared with those of p-type solar cells. The electrical properties of PID in solar cells are observed with the light I-V, quantum efficiency (QE), and electroluminescence (EL). The possible causes for the change in the external quantum efficiency (EQE) after PID are interpreted using PC1D and are discussed by comparing the experimental results with the simulation results.
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- Appears in
Collections - Graduate School of Energy and Environment (KU-KIST GREEN SCHOOL) > Department of Energy and Environment > 1. Journal Articles
- College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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