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Influence of Fast Charging on Accuracy of Mobility in a-InHfZnO Thin-Film Transistor
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Taeho | - |
| dc.contributor.author | Choi, Rino | - |
| dc.contributor.author | Jeon, Sanghun | - |
| dc.date.accessioned | 2021-09-03T10:24:32Z | - |
| dc.date.available | 2021-09-03T10:24:32Z | - |
| dc.date.created | 2021-06-16 | - |
| dc.date.issued | 2017-02 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/84769 | - |
| dc.description.abstract | Amorphous InHfZnO (a-IHZO) thin-film devices have attracted considerable attention owing to their highmobility. However, themobility of a-IHZO thin-film transistors has not been correctly determined, because it is affected by fast charging. In this letter, we investigated the effect of transient charging on the mobility. On the basis of the pulse IDS-VGS method, we present an approach to estimate a correction factor for the measured apparent mobility, which was extracted from pulse amplitude versus threshold voltage shift. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.subject | ELECTRON-TRAPPING CHARACTERIZATION | - |
| dc.subject | V-G METHODOLOGY | - |
| dc.subject | OXIDE SEMICONDUCTOR | - |
| dc.subject | PERFORMANCE | - |
| dc.subject | DIELECTRICS | - |
| dc.title | Influence of Fast Charging on Accuracy of Mobility in a-InHfZnO Thin-Film Transistor | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Jeon, Sanghun | - |
| dc.identifier.doi | 10.1109/LED.2016.2638965 | - |
| dc.identifier.scopusid | 2-s2.0-85011298824 | - |
| dc.identifier.wosid | 000395470700013 | - |
| dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.38, no.2, pp.203 - 206 | - |
| dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
| dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
| dc.citation.volume | 38 | - |
| dc.citation.number | 2 | - |
| dc.citation.startPage | 203 | - |
| dc.citation.endPage | 206 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.subject.keywordPlus | ELECTRON-TRAPPING CHARACTERIZATION | - |
| dc.subject.keywordPlus | V-G METHODOLOGY | - |
| dc.subject.keywordPlus | OXIDE SEMICONDUCTOR | - |
| dc.subject.keywordPlus | PERFORMANCE | - |
| dc.subject.keywordPlus | DIELECTRICS | - |
| dc.subject.keywordAuthor | InHfZnO | - |
| dc.subject.keywordAuthor | fast charging | - |
| dc.subject.keywordAuthor | mobility | - |
| dc.subject.keywordAuthor | pulse I-V | - |
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