Giant Temperature Coefficient of Resistivity and Cryogenic Sensitivity in Silicon with Galvanically Displaced Gold Nanoparticles in Freeze-Out Region
DC Field | Value | Language |
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dc.contributor.author | Lee, Seung-Hoon | - |
dc.contributor.author | Hwang, Seongpil | - |
dc.contributor.author | Jang, Jae-Won | - |
dc.date.accessioned | 2021-09-03T10:31:05Z | - |
dc.date.available | 2021-09-03T10:31:05Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2017-02 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/84805 | - |
dc.description.abstract | The temperature coefficient of resistivity (TCR) and cryogenic sensitivity (Sr) of p-type silicon (p-Si) in the low-temperature region (10-30 K) are remarkably improved by increasing the coverage of galvanically displaced Au nanoparticles (NPs). By increase of the galvanic displacement time from 10 to 30 s, the average surface roughness (R-a) of the samples increases from 0.31 to 2.31 nm and the coverage rate of Au NPs increases from 3.1% to 21.9%. In the freeze-out region of the sample, an up to 103% increase of TCR and dramatically improved Sv of p-Si (similar to 5813%) are observed with Au coverage of 21.9% compared to p-Si without galvanically displaced Au NPs. By means of a finite element method (FEM) simulation study, it was found that the increase of surface roughness and a number of Au NPs on p-Si results in a higher temperature gradient and thermoelectric power to cause the unusual TCR and S-v values in the samples. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | THERMAL-CONDUCTIVITY | - |
dc.subject | DOPED SILICON | - |
dc.subject | AU DEPOSITION | - |
dc.subject | AQUEOUS HF | - |
dc.subject | BOLOMETER | - |
dc.subject | SI(111) | - |
dc.subject | SENSORS | - |
dc.subject | SURFACE | - |
dc.subject | FILMS | - |
dc.title | Giant Temperature Coefficient of Resistivity and Cryogenic Sensitivity in Silicon with Galvanically Displaced Gold Nanoparticles in Freeze-Out Region | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hwang, Seongpil | - |
dc.identifier.doi | 10.1021/acsnano.6b07007 | - |
dc.identifier.scopusid | 2-s2.0-85014301551 | - |
dc.identifier.wosid | 000395357300047 | - |
dc.identifier.bibliographicCitation | ACS NANO, v.11, no.2, pp.1572 - 1580 | - |
dc.relation.isPartOf | ACS NANO | - |
dc.citation.title | ACS NANO | - |
dc.citation.volume | 11 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 1572 | - |
dc.citation.endPage | 1580 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | THERMAL-CONDUCTIVITY | - |
dc.subject.keywordPlus | DOPED SILICON | - |
dc.subject.keywordPlus | AU DEPOSITION | - |
dc.subject.keywordPlus | AQUEOUS HF | - |
dc.subject.keywordPlus | BOLOMETER | - |
dc.subject.keywordPlus | SI(111) | - |
dc.subject.keywordPlus | SENSORS | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | galvanic displacement | - |
dc.subject.keywordAuthor | temperature coefficient of resistivity | - |
dc.subject.keywordAuthor | bolometer | - |
dc.subject.keywordAuthor | cryogenic sensitivity | - |
dc.subject.keywordAuthor | Au nanoparticles | - |
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