Formation of an indium tin oxide nanodot/Ag nanowire electrode as a current spreader for near ultraviolet AlGaN-based light-emitting diodes
DC Field | Value | Language |
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dc.contributor.author | Park, Jae-Seong | - |
dc.contributor.author | Kim, Jae-Ho | - |
dc.contributor.author | Kim, Jun-Yong | - |
dc.contributor.author | Kim, Dae-Hyun | - |
dc.contributor.author | Na, Jin-Young | - |
dc.contributor.author | Kim, Sun-Kyung | - |
dc.contributor.author | Kang, Daesung | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-03T10:43:41Z | - |
dc.date.available | 2021-09-03T10:43:41Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2017-01-27 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/84867 | - |
dc.description.abstract | Indium tin oxide (ITO) nanodots (NDs) were combined with Ag nanowires (Ag NWs) as a p-type electrode in near ultraviolet AlGaN-based light-emitting diodes (LEDs) to increase light output power. The Ag NWs were 30 +/- 5 nm in diameter and 25 +/- 5 mu m in length. The transmittance of 10 nm-thick ITO-only was 98% at 385 nm, while the values for ITO ND/Ag NW were 83%-88%. ITO ND/Ag NW films showed lower sheet resistances (32-51 Omega sq(-1)) than the ITO-only film (950 Omega sq(-1)). LEDs (chip size: 300. x. 800 mu m(2)) fabricated using. the ITO NDs/Ag NW electrodes exhibited higher forward-bias voltages (3.52-3.75 V at 20 mA) than the LEDs with the 10 nm-thick ITO-only electrode (3.5 V). The LEDs with ITO ND/Ag NW electrodes yielded a 24%-62% higher light output power (at 20 mA) than those with the 10 nmthick ITO-only electrode. Furthermore, finite-difference time-domain (FDTD) simulations were performed to investigate the extraction efficiency. Based on the emission images and FDTD simulations, the enhanced light output with the ITO ND/Ag NW electrodes is attributed to. improved current spreading and better extraction efficiency. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | GA-DOPED ZNO | - |
dc.subject | GRAPHENE ELECTRODE | - |
dc.subject | CONTACT | - |
dc.subject | OUTPUT | - |
dc.subject | LAYER | - |
dc.subject | LEDS | - |
dc.title | Formation of an indium tin oxide nanodot/Ag nanowire electrode as a current spreader for near ultraviolet AlGaN-based light-emitting diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1088/1361-6528/28/4/045205 | - |
dc.identifier.scopusid | 2-s2.0-85007477164 | - |
dc.identifier.wosid | 000391570800002 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.28, no.4 | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 28 | - |
dc.citation.number | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | GA-DOPED ZNO | - |
dc.subject.keywordPlus | GRAPHENE ELECTRODE | - |
dc.subject.keywordPlus | CONTACT | - |
dc.subject.keywordPlus | OUTPUT | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | LEDS | - |
dc.subject.keywordAuthor | Ag nanowire | - |
dc.subject.keywordAuthor | ITO nanodot | - |
dc.subject.keywordAuthor | NUV light-emitting diode | - |
dc.subject.keywordAuthor | current spreading | - |
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