Perpendicular Magnetic Anisotropy and Interfacial Dzyaloshinskii-Moriya Interaction in Pt/CoFeSiB Structures
- Authors
- Cha, In Ho; Kim, Nam-Hui; Kim, Yong Jin; Kim, Gyu Won; You, Chun-Yeol; Kim, Young Keun
- Issue Date
- 2017
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Spin electronics; Dzyaloshinskii-Moriya interaction; magnetic film; magnetic random-access memory; perpendicular magnetic anisotropy
- Citation
- IEEE MAGNETICS LETTERS, v.8
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE MAGNETICS LETTERS
- Volume
- 8
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/86263
- DOI
- 10.1109/LMAG.2016.2617304
- ISSN
- 1949-307X
- Abstract
- Magnetic materials exhibiting perpendicular magnetic anisotropy (PMA) have an important role in the development of high-density magnetic random-access memory and domain-wall devices. Exotic physical phenomena result from spin-orbit coupling, such as PMA and the interfacial Dzyaloshinskii-Moriya interaction (iDMI), at interfaces between nonmagnetic (NM) and ferromagnetic (FM) materials. We report on the NM Pt thickness dependence of PMA and iDMI in Ta/Pt/CoFeSiB/Ta films and the MgO thickness dependence of PMA in Ta/Pt/CoFeSiB/MgO/Ta films. We selected amorphous FM CoFeSiB because of its lower saturation magnetization (560 emu/cm(3)) than that of Co or CoFeB, which may be beneficial for lowering the current density for switching. All samples were deposited by dc magnetron sputtering and annealed at 300 degrees C for 1 h. The Ta(3)/Pt(5)/CoFeSiB(1.5)/Ta(5) (nm) film exhibited PMA in the as-deposited state as well as after heat treatment. This structure possessed an iDMI energy density of 0.386 mJ/m(2).
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