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Effects of Doping Concentration and Emission Layer Thickness on Recombination Zone and Exciton Density Control in Blue Phosphorescent Organic Light-Emitting Diodes

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dc.contributor.authorJesuraj, P. Justin-
dc.contributor.authorHafeez, Hassan-
dc.contributor.authorRhee, Sang Ho-
dc.contributor.authorKim, Dong Hyun-
dc.contributor.authorSong, Myungkwan-
dc.contributor.authorKim, Chang Su-
dc.contributor.authorRyu, Seung Yoon-
dc.date.accessioned2021-09-03T15:00:54Z-
dc.date.available2021-09-03T15:00:54Z-
dc.date.created2021-06-16-
dc.date.issued2017-
dc.identifier.issn2162-8769-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/86316-
dc.description.abstractHerein, we evaluate the effects of the doping concentration and emissive layer (EML) thickness to control the recombination zone (RZ) and exciton density (ED) in blue phosphorescent organic light-emitting diodes (Ph-OLEDs). Varying the doping concentration of the guest molecule iridium-(III)-bis-[(4,6-difluorophenyl)-pyridinato-N,C2'] picolinate (FIrpic) in host materials together with different EML thicknesses induced a change in the RZ and ED and also influenced the quenching of triplet excitons. Increasing the dopant concentration in the 20 nm EML generated a wider RZ and greater ED and induced a blueshift in the electroluminescence spectrum, whereas a redshift in the electroluminescence (EL) spectrum was observed in the case of the 30 nm EML. It is proposed that the micro-cavity effect (around 500 nm), shift of the RZ and ED along with band alignment tactics were operative for improving the performance of the blue Ph-OLEDs. (c) 2017 The Electrochemical Society. All rights reserved.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherELECTROCHEMICAL SOC INC-
dc.subjectEXTERNAL QUANTUM EFFICIENCY-
dc.subjectDEVICE PERFORMANCE-
dc.subjectBLOCKING LAYER-
dc.subjectTRANSPORT-
dc.subjectHOST-
dc.titleEffects of Doping Concentration and Emission Layer Thickness on Recombination Zone and Exciton Density Control in Blue Phosphorescent Organic Light-Emitting Diodes-
dc.typeArticle-
dc.contributor.affiliatedAuthorRyu, Seung Yoon-
dc.identifier.doi10.1149/2.0321712jss-
dc.identifier.scopusid2-s2.0-85046969621-
dc.identifier.wosid000419175500042-
dc.identifier.bibliographicCitationECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.6, no.12, pp.R170 - R174-
dc.relation.isPartOfECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY-
dc.citation.titleECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY-
dc.citation.volume6-
dc.citation.number12-
dc.citation.startPageR170-
dc.citation.endPageR174-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusEXTERNAL QUANTUM EFFICIENCY-
dc.subject.keywordPlusDEVICE PERFORMANCE-
dc.subject.keywordPlusBLOCKING LAYER-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusHOST-
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