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Enhanced Photocurrents with ZnS Passivated Cu(ln,Ga)(Se,S)(2) Photocathodes Synthesized Using a Nonvacuum Process for Solar Water Splitting

Authors
Chae, Sang YounPark, Se JinHan, Sung GyuJung, HyejinKim, Chae-WoongJeong, ChaehwanJoo, Oh-ShimMin, Byoung KounHwang, Yun Jeong
Issue Date
7-12월-2016
Publisher
AMER CHEMICAL SOC
Citation
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v.138, no.48, pp.15673 - 15681
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume
138
Number
48
Start Page
15673
End Page
15681
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/86559
DOI
10.1021/jacs.6b09595
ISSN
0002-7863
Abstract
Chalcopyrite Cu(In,Ga)(Se,S)(2) (CIGS) semiconductors are potential candidates for use in photoelectrochemical (PEC) hydrogen generation due to their excellent optical absorption properties and high conduction band edge position. In the present research, CIGS thin film was successfully prepared on a transparent substrate (F:SnO2 glass) using a solution-based process and applied for a photocathode in solar water splitting, which shows control of the surface state associated with sulfurization/selenization process significantly influences on the PEC activity. A ZnS passivation surface layer was introduced, which effectively suppresses charge recombination by surface states of CIGS. The CIGS/ZnS/Pt photocathode exhibited highly enhanced PEC activity (similar to 24 mA.cm(-2) at -0.3 V vs RHE). The performances of our CIGS photocathode on the transparent substrate were also characterized under front/back light illumination, and the incident photon to current conversion efficiency (IPCE) drastically changed depending on the illumination directions showing decreased IPCE especially under UV region with back illumination. The slow minority carrier (electron) transportation is suggested as a limiting factor for the PEC activity of the CIGS photocathode.
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