Electrical characteristics of MoSe2 TFTs dependent on the Al2O3 capping layer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Hyunjea | - |
dc.contributor.author | Kim, Ji Heon | - |
dc.contributor.author | Lee, Cheol Jin | - |
dc.date.accessioned | 2021-09-03T16:43:45Z | - |
dc.date.available | 2021-09-03T16:43:45Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2016-11-28 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/86797 | - |
dc.description.abstract | Back-gated MoSe2 thin-film transistors (TFTs) with an Al2O3-capping layer were fabricated, and the device characteristics of the MoSe2 TFTs that are dependent on the Al2O3-capping-layer passivation were investigated. The output drain current was doubled, the fluctuation of the output current was suppressed, and the threshold voltage of the MoSe2 TFTs was negatively shifted with the Al2O3-capping layer. The on/off-current ratio of the MoSe2 TFTs is approximately six decades regardless of the Al2O3-capping layer, but the field-effect mobility was greatly increased from 2.86 cm(2)/Vs to 10.26 cm(2)/Vs after the deposition of the Al2O3-capping layer. According to the results of this study, the Al2O3-capping layer can enhance the device characteristics of MoSe2 TFTs. Published by AIP Publishing. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | MOBILITY TRANSISTORS | - |
dc.subject | LARGE-AREA | - |
dc.subject | PASSIVATION | - |
dc.subject | MONOLAYER | - |
dc.subject | GRAPHENE | - |
dc.subject | FILMS | - |
dc.title | Electrical characteristics of MoSe2 TFTs dependent on the Al2O3 capping layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Cheol Jin | - |
dc.identifier.doi | 10.1063/1.4971258 | - |
dc.identifier.scopusid | 2-s2.0-85000671212 | - |
dc.identifier.wosid | 000390243100025 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.109, no.22 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 109 | - |
dc.citation.number | 22 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | MOBILITY TRANSISTORS | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | FILMS | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.