Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer
DC Field | Value | Language |
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dc.contributor.author | Kumaresan, Yogeenth | - |
dc.contributor.author | Pak, Yusin | - |
dc.contributor.author | Lim, Namsoo | - |
dc.contributor.author | Kim, Yonghun | - |
dc.contributor.author | Park, Min-Ji | - |
dc.contributor.author | Yoon, Sung-Min | - |
dc.contributor.author | Youn, Hyoc-Min | - |
dc.contributor.author | Lee, Heon | - |
dc.contributor.author | Lee, Byoung Hun | - |
dc.contributor.author | Jung, Gun Young | - |
dc.date.accessioned | 2021-09-03T16:44:58Z | - |
dc.date.available | 2021-09-03T16:44:58Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2016-11-23 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/86803 | - |
dc.description.abstract | Flexible In-Ga-ZnO (IGZO) thin film transistor (TFT) on a polyimide substrate is produced by employing a thermally stable SA7 organic material as the multi-functional barrier and dielectric layers. The IGZO channel layer was sputtered at Ar:O-2 gas flow rate of 100:1 sccm and the fabricated TFT exhibited excellent transistor performances with a mobility of 15.67 cm(2)/Vs, a threshold voltage of 6.4 V and an on/off current ratio of 4.5 x 10(5). Further, high mechanical stability was achieved by the use of organic/inorganic stacking of dielectric and channel layers. Thus, the IGZO transistor endured unprecedented bending strain up to 3.33% at a bending radius of 1.5 mm with no significant degradation in transistor performances along with a superior reliability up to 1000 cycles. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.subject | ZINC-OXIDE | - |
dc.subject | HIGH-PERFORMANCE | - |
dc.subject | ELECTRICAL PERFORMANCE | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.subject | BIAS STABILITY | - |
dc.subject | TRANSPARENT | - |
dc.subject | CHANNEL | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | NANOCOMPOSITES | - |
dc.subject | FABRICATION | - |
dc.title | Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Heon | - |
dc.identifier.doi | 10.1038/srep37764 | - |
dc.identifier.scopusid | 2-s2.0-84996558221 | - |
dc.identifier.wosid | 000388809100001 | - |
dc.identifier.bibliographicCitation | SCIENTIFIC REPORTS, v.6 | - |
dc.relation.isPartOf | SCIENTIFIC REPORTS | - |
dc.citation.title | SCIENTIFIC REPORTS | - |
dc.citation.volume | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.subject.keywordPlus | ZINC-OXIDE | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | ELECTRICAL PERFORMANCE | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | BIAS STABILITY | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | NANOCOMPOSITES | - |
dc.subject.keywordPlus | FABRICATION | - |
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