Extremely Low-Cost, Scalable Oxide Semiconductors Employing Poly(acrylic acid)-Decorated Carbon Nanotubes for Thin-Film Transistor Applications
- Authors
- Hong, Gyu Ri; Lee, Sun Sook; Jo, Yejin; Choi, Min Jun; Kang, Yun Chan; Ryu, Beyong-Hwan; Chung, Kwun-Bum; Choi, Youngmin; Jeong, Sunho
- Issue Date
- 9-11월-2016
- Publisher
- AMER CHEMICAL SOC
- Keywords
- low cost; scalable; oxide semiconductor; carbon nanotube; thin-film transistor
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.8, no.44, pp.29858 - 29865
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 8
- Number
- 44
- Start Page
- 29858
- End Page
- 29865
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/86846
- DOI
- 10.1021/acsami.6b08950
- ISSN
- 1944-8244
- Abstract
- In this study, we report for the first time a simple bar-coating process of soluble metal oxide semiconductors, consuming the 0.1 g of precursor solution in 4 in. sized devices with a cost of only $0.05. To resolve the issue of critical degradation in device performance observable in slow-evaporation-based film formation processes, we incorporate the unprecedentedly developed, poly(acrylic acid)-decorated multiwalled carbon nanotubes (MWNTs) in oxide semiconductors. It is demonstrated that a field-effect mobility is improved to the value of 7.34 cm(2)/(V s) (improvement by a factor of 2) without any critical variation in threshold voltage and on/off current ratio.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.