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Growth and scintillation properties of 3 in. diameter Ce doped Gd3Ga3Al2O12 scintillation single crystal
- Authors
- Kamada, Kei; Shoji, Yasuhiro; Kochurikhin, Vladimir V.; Okumura, Satoshi; Yamamoto, Seiichi; Nagura, Aya; Yeom, Jung Yeol; Kurosawa, Shunsuke; Yokota, Yuui; Ohashi, Yuji; Nikl, Martin; Yoshikawa, Akira
- Issue Date
- 15-10월-2016
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Single crystal growth; Oxides; Scintillator materials; Scintillators
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.452, pp.81 - 84
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 452
- Start Page
- 81
- End Page
- 84
- ISSN
- 0022-0248
- Abstract
- The 3 in. size Ce1%:Gd3Al2Ga3O12 single crystals were prepared by the Czochralski (Cz) method. Optical constants were measured. Chemical composition analysis and uniformity of scintillation decay and light yield along growth direction were evaluated. The timing resolution measurement for a pair of 3 mm x 3 mm x 3 mm size Ce:GAGG scintillator crystals was performed using Si-PMs. (C) 2016 Elsevier B.V. All rights reserved.
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Collections - Graduate School > Department of Bioengineering > 1. Journal Articles
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