Study of Electrical Characteristics of a 4H-SiC Merged/PiN Schottky Adding a Low-Doped P-Barrier
DC Field | Value | Language |
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dc.contributor.author | Lee, Jae Hyun | - |
dc.contributor.author | Geum, Jongmin | - |
dc.contributor.author | Kyoung, Sinsu | - |
dc.contributor.author | Sung, Man Young | - |
dc.date.accessioned | 2021-09-03T19:10:43Z | - |
dc.date.available | 2021-09-03T19:10:43Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2016-10 | - |
dc.identifier.issn | 1555-130X | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/87293 | - |
dc.description.abstract | Silicon carbide (SiC) has received attention as a power device material because of its low resistance and leakage current owing to its wide band gap and low intrinsic carrier density. The structure of a silicon (Si) Schottky barrier diode (SBD), because of its large reverse leakage current, had not been used in high-voltage power semiconductor applications. However, when that material was replaced with SiC, SBD came to be used in power devices. In order to overcome the structural limitations, a merged PiN Schottky (MPS) structure, which has P+ barriers consisting of ohmic contacts instead of a floating P-barrier, has been proposed and is being actively researched. In this paper, we propose a structure that has a low-doped P-barrier consisting of ohmic contacts between the P+ barriers of the conventional MPS structure. The width and the doping concentration of the low-doped P-barrier are set as design variables and are optimized. In the optimized MPS diode, the breakdown voltage was improved by 9.7%, and the leakage current was decreased by 31.8%. In addition, this study confirmed that the on-resistance was reduced by 7.6%. The suggested structure overcomes the tradeoffs between breakdown voltage and leakage current, and can improve the off-state characteristics. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | DIODES | - |
dc.subject | VOLTAGE | - |
dc.title | Study of Electrical Characteristics of a 4H-SiC Merged/PiN Schottky Adding a Low-Doped P-Barrier | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Sung, Man Young | - |
dc.identifier.doi | 10.1166/jno.2016.1990 | - |
dc.identifier.scopusid | 2-s2.0-85018491189 | - |
dc.identifier.wosid | 000386520700007 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.11, no.5, pp.589 - 594 | - |
dc.relation.isPartOf | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | - |
dc.citation.title | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | - |
dc.citation.volume | 11 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 589 | - |
dc.citation.endPage | 594 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | DIODES | - |
dc.subject.keywordPlus | VOLTAGE | - |
dc.subject.keywordAuthor | 4H-SiC | - |
dc.subject.keywordAuthor | Schottky Barrier Diode | - |
dc.subject.keywordAuthor | Merged PiN SBD | - |
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