Photo-responsive transistors of CVD grown single-layer MoS2 and its nanoscale optical characteristics
DC Field | Value | Language |
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dc.contributor.author | Park, Hyeon Jung | - |
dc.contributor.author | Kim, Min Su | - |
dc.contributor.author | Kim, Jeongyong | - |
dc.contributor.author | Joo, Jinsoo | - |
dc.date.accessioned | 2021-09-03T19:22:22Z | - |
dc.date.available | 2021-09-03T19:22:22Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2016-10 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/87350 | - |
dc.description.abstract | The single-layer and multi-layers of MoS2 were grown using the chemical vapor deposition (CVD) method. The structural properties of the MoS2 were investigated through X-ray photoelectron spectroscopy (XPS). The optical characteristics in nanoscale of the MoS2 were determined from the analysis of Raman and photoluminescence (PL) spectra using a high-resolution laser confocal microscope (LCM). Thin-film-transistors (TFTs) using a single-layer MoS2 were fabricated, and the photo-responsive current-voltage (IeV) characteristics of the TFTs were measured with varying intensities of incident light. We observed the increase of both the photo-current and mobility with increasing the intensity of incident light. This is due to the contribution of photo-induced charge carriers from the valance band and trap states. The increasing rate of the photo-current of the TFTs with gate bias (i.e. on state) was considerably higher than that in off state, indicating the gate controlled photo-sensitive transistor. (C) 2016 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | HEXAGONAL BORON-NITRIDE | - |
dc.subject | LARGE-AREA | - |
dc.subject | ATOMIC LAYERS | - |
dc.subject | GRAPHENE | - |
dc.subject | PHOTOTRANSISTORS | - |
dc.subject | MONOLAYER | - |
dc.subject | HETEROSTRUCTURES | - |
dc.subject | PHOTODETECTOR | - |
dc.subject | FILM | - |
dc.title | Photo-responsive transistors of CVD grown single-layer MoS2 and its nanoscale optical characteristics | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Joo, Jinsoo | - |
dc.identifier.doi | 10.1016/j.cap.2016.07.006 | - |
dc.identifier.scopusid | 2-s2.0-84982168590 | - |
dc.identifier.wosid | 000384132100010 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.16, no.10, pp.1320 - 1325 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 16 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 1320 | - |
dc.citation.endPage | 1325 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002160459 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | HEXAGONAL BORON-NITRIDE | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | ATOMIC LAYERS | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | PHOTOTRANSISTORS | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | PHOTODETECTOR | - |
dc.subject.keywordPlus | FILM | - |
dc.subject.keywordAuthor | MoS2 | - |
dc.subject.keywordAuthor | Transistor | - |
dc.subject.keywordAuthor | Mobility | - |
dc.subject.keywordAuthor | Photo-responsive | - |
dc.subject.keywordAuthor | Nanoscale | - |
dc.subject.keywordAuthor | Photoluminescence | - |
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