Edge Termination for Optimized Silicon Carbide MOSFET Breakdown Voltage

Abstract

In this paper, a 1200-V silicon carbide (SiC) MOSFET field ring was designed to disperse the electric field of an edge region. The field ring structure normally used for silicon (Si) edge termination was applied to SiC, and the same electric field dispersion effect that is seen when using a Si field ring was observed. In order to optimize the breakdown voltage, three design parameters were varied the spacing between the buffer and the field ring, the number of field rings, and the spacing between the field rings. The input parameters used in this paper are the optimized field ring length, depth, and concentration. Using these three parameters, the 1200-V SiC MOSFET edge termination was designed and optimized.