Emerging Three-Terminal Magnetic Memory Devices
DC Field | Value | Language |
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dc.contributor.author | Lee, Seo-Won | - |
dc.contributor.author | Lee, Kyung-Jin | - |
dc.date.accessioned | 2021-09-03T19:35:36Z | - |
dc.date.available | 2021-09-03T19:35:36Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2016-10 | - |
dc.identifier.issn | 0018-9219 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/87412 | - |
dc.description.abstract | Spin-transfer torques can switch magnetizations via a current passing through a magnetic tunnel junction, an effect that is being pursued as the switching mechanism in spin-transfer torque magnetic random access memory. Three-terminal devices are also possible. One mechanism is to have a free layer that contains a domain wall that can be manipulated by spin-transfer torques and moved between two configurations that can be read by a separate connection. An alternate approach uses the recent development of spin-orbit torques, which offer an efficient way of manipulating the magnetization of a tunnel junction by current passing through an adjacent layer. These torques allow for the separation of reading and writing currents through three-terminal devices structures. This paper presents the basic principles of spin-orbit torques, the distinguishing features of spin-orbit-torque-induced magnetization dynamics as compared to magnetization dynamics driven by conventional spin-transfer torques. From the application point of view, it presents the pros and cons of spin-orbit-torque-based three-terminal devices including magnetic random access memories. Then, it discusses domain-wall-based three-terminal devices and the advantages and disadvantages of each. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | SPIN-TRANSFER-TORQUE | - |
dc.subject | DZYALOSHINSKII-MORIYA INTERACTION | - |
dc.subject | DOMAIN-WALL MOTION | - |
dc.subject | THICKNESS DEPENDENCE | - |
dc.subject | VOLTAGE-DEPENDENCE | - |
dc.subject | HEUSLER ALLOY | - |
dc.subject | DRIVEN | - |
dc.subject | DYNAMICS | - |
dc.subject | MAGNETORESISTANCE | - |
dc.subject | EXCITATION | - |
dc.title | Emerging Three-Terminal Magnetic Memory Devices | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Kyung-Jin | - |
dc.identifier.doi | 10.1109/JPROC.2016.2543782 | - |
dc.identifier.scopusid | 2-s2.0-85023174079 | - |
dc.identifier.wosid | 000385371800005 | - |
dc.identifier.bibliographicCitation | PROCEEDINGS OF THE IEEE, v.104, no.10, pp.1831 - 1843 | - |
dc.relation.isPartOf | PROCEEDINGS OF THE IEEE | - |
dc.citation.title | PROCEEDINGS OF THE IEEE | - |
dc.citation.volume | 104 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 1831 | - |
dc.citation.endPage | 1843 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | SPIN-TRANSFER-TORQUE | - |
dc.subject.keywordPlus | DZYALOSHINSKII-MORIYA INTERACTION | - |
dc.subject.keywordPlus | DOMAIN-WALL MOTION | - |
dc.subject.keywordPlus | THICKNESS DEPENDENCE | - |
dc.subject.keywordPlus | VOLTAGE-DEPENDENCE | - |
dc.subject.keywordPlus | HEUSLER ALLOY | - |
dc.subject.keywordPlus | DRIVEN | - |
dc.subject.keywordPlus | DYNAMICS | - |
dc.subject.keywordPlus | MAGNETORESISTANCE | - |
dc.subject.keywordPlus | EXCITATION | - |
dc.subject.keywordAuthor | Domain-wall devices | - |
dc.subject.keywordAuthor | magnetic random access memories | - |
dc.subject.keywordAuthor | spin-orbit torques | - |
dc.subject.keywordAuthor | spin-transfer torques | - |
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