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Field-free switching of perpendicular magnetization through spin-orbit torque in antiferromagnet/ferromagnet/oxide structures

Authors
Oh, Young-WanBaek, Seung-Heon ChrisKim, Y. M.Lee, Hae YeonLee, Kyeong-DongYang, Chang-GeunPark, Eun-SangLee, Ki-SeungKim, Kyoung-WhanGo, GyungchoonJeong, Jong-RyulMin, Byoung-ChulLee, Hyun-WooLee, Kyung-JinPark, Byong-Guk
Issue Date
10월-2016
Publisher
NATURE PUBLISHING GROUP
Citation
NATURE NANOTECHNOLOGY, v.11, no.10, pp.878 - +
Indexed
SCIE
SCOPUS
Journal Title
NATURE NANOTECHNOLOGY
Volume
11
Number
10
Start Page
878
End Page
+
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/87439
DOI
10.1038/NNANO.2016.109
ISSN
1748-3387
Abstract
Spin-orbit torques arising from the spin-orbit coupling of non-magnetic heavy metals allow electrical switching of perpendicular magnetization. However, the switching is not purely electrical in laterally homogeneous structures. An extra in-plane magnetic field is indeed required to achieve deterministic switching, and this is detrimental for device applications. On the other hand, if antiferromagnets can generate spin-orbit torques, they may enable all-electrical deterministic switching because the desired magnetic field may be replaced by their exchange bias. Here we report sizeable spin-orbit torques in IrMn/CoFeB/MgO structures. The antiferromagnetic IrMn layer also supplies an in-plane exchange bias field, which enables all-electrical deterministic switching of perpendicular magnetization without any assistance from an external magnetic field. Together with sizeable spin-orbit torques, these features make antiferromagnets a promising candidate for future spintronic devices. We also show that the signs of the spin-orbit torques in various IrMn-based structures cannot be explained by existing theories and thus significant theoretical progress is required.
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