Quantum Simulation Study on Performance Optimization of GaSb/InAs nanowire Tunneling FET
- Authors
- Hur, Ji-Hyun; Jeon, Sanghun
- Issue Date
- 10월-2016
- Publisher
- IEEK PUBLICATION CENTER
- Keywords
- Tunneling field effect transistor; GaSb; InAs; nanowire; quantum transport
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.16, no.5, pp.630 - 634
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 16
- Number
- 5
- Start Page
- 630
- End Page
- 634
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/87440
- DOI
- 10.5573/JSTS.2016.16.5.630
- ISSN
- 1598-1657
- Abstract
- We report the computer aided design results for a GaSb/InAs broken-gap gate all around nanowire tunneling FET (TFET). In designing, the semi-empirical tight-binding (TB) method using sp3d5s* is used as band structure model to produce the bulk properties. The calculated band structure is cooperated with open boundary conditions (OBCs) and a three-dimensional Schrodinger-Poisson solver to execute quantum transport simulators. We find an device configuration for the operation voltage of 0.3 V which exhibit desired low sub-threshold swing (< 60 mV/dec) by adopting receded gate configuration while maintaining the high current characteristic (I-ON > 100 mu A/mu m) that broken-gap TFETs normally have.
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Collections - College of Science and Technology > Display Convergence in Division of Display and Semiconductor Physics > 1. Journal Articles
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