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Control of refractive index by annealing to achieve high figure of merit for TiO2/Ag/TiO2 multilayer films

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dc.contributor.authorKim, Jae-Ho-
dc.contributor.authorKim, Dae-Hyun-
dc.contributor.authorKim, Sun-Kyung-
dc.contributor.authorBae, Dukkyu-
dc.contributor.authorYoo, Young-Zo-
dc.contributor.authorSeong, Tae-Yeon-
dc.date.accessioned2021-09-03T20:50:08Z-
dc.date.available2021-09-03T20:50:08Z-
dc.date.created2021-06-16-
dc.date.issued2016-09-
dc.identifier.issn0272-8842-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/87732-
dc.description.abstractWe modified the refractive index (n) of TiO2 by annealing at various temperatures to obtain a high figure of merit (FOM) for TiO2/TiO2 (45 nm/17 nm/45 nm) multilayer films deposited on glass substrates. Unlike the as-deposited and 300 degrees C-annealed TiO2 films, the 600 degrees C-annealed sample was crystallized in the anatase phase. The as-deposited TiO2/Ag/as-deposited TiO2 multilayer film exhibited a transmittance of 94.6% at 550 nm, whereas that of the as-deposited TiO2/Ag/600 degrees C-annealed TiO2 (lower) multilayer film was 96.6%. At 550 nm, n increased from 2.293 to 2.336 with increasing temperature. The carrier concentration, mobility, and sheet resistance varied with increasing annealing temperature. The samples exhibited smooth surfaces with a root-mean-square roughness of 0.37-1.09 nm. The 600 degrees C-annealed multilayer yielded the highest Haacke's FOM of 193.9 x 10(-3) Omega(-1). (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherELSEVIER SCI LTD-
dc.subjectSTRUCTURAL-PROPERTIES-
dc.subjectTRANSPARENT-
dc.subjectTRANSITION-
dc.subjectCONDUCTOR-
dc.subjectELECTRODE-
dc.subjectLAYER-
dc.titleControl of refractive index by annealing to achieve high figure of merit for TiO2/Ag/TiO2 multilayer films-
dc.typeArticle-
dc.contributor.affiliatedAuthorSeong, Tae-Yeon-
dc.identifier.doi10.1016/j.ceramint.2016.06.015-
dc.identifier.scopusid2-s2.0-84976448039-
dc.identifier.wosid000380081900095-
dc.identifier.bibliographicCitationCERAMICS INTERNATIONAL, v.42, no.12, pp.14071 - 14076-
dc.relation.isPartOfCERAMICS INTERNATIONAL-
dc.citation.titleCERAMICS INTERNATIONAL-
dc.citation.volume42-
dc.citation.number12-
dc.citation.startPage14071-
dc.citation.endPage14076-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryMaterials Science, Ceramics-
dc.subject.keywordPlusSTRUCTURAL-PROPERTIES-
dc.subject.keywordPlusTRANSPARENT-
dc.subject.keywordPlusTRANSITION-
dc.subject.keywordPlusCONDUCTOR-
dc.subject.keywordPlusELECTRODE-
dc.subject.keywordPlusLAYER-
dc.subject.keywordAuthorTiO2-
dc.subject.keywordAuthorRefractive index-
dc.subject.keywordAuthorAg-
dc.subject.keywordAuthorTransparent conducting electrode-
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공과대학 (신소재공학부)
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