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Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors

Authors
Kim, TaehoNam, YunyongHur, Ji-HyunPark, Sang-Hee KoJeon, Sanghun
Issue Date
12-8월-2016
Publisher
IOP PUBLISHING LTD
Keywords
hydrogen plays a useful role in TFTs by improving the device performance and stability
Citation
NANOTECHNOLOGY, v.27, no.32
Indexed
SCIE
SCOPUS
Journal Title
NANOTECHNOLOGY
Volume
27
Number
32
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/87819
DOI
10.1088/0957-4484/27/32/325203
ISSN
0957-4484
Abstract
Hydrogen in zinc oxide based semiconductors functions as a donor or a defect de-activator depending on its concentration, greatly affecting the device characteristics of oxide thin-film transistors (TFTs). Thus, controlling the hydrogen concentration in oxide semiconductors is very important for achieving high mobility and minimizing device instability. In this study, we investigated the charge transport dynamics of the amorphous semiconductor InGaZnO at various hydrogen concentrations as a function of the deposition temperature of the gate insulator. To examine the nature of dynamic charge trapping, we employed short-pulse current-voltage and transient current-time measurements. Among various examined oxide devices, that with a high hydrogen concentration exhibits the best performance characteristics, such as high saturation mobility (10.9 cm(2) v(-1) s(-1)), low subthreshold slope (0.12 V/dec), and negligible hysteresis, which stem from low defect densities and negligible transient charge trapping. Our finding indicates that hydrogen atoms effectively passivate the defects in subgap states of the bulk semiconductor, minimizing the mobility degradation and threshold voltage instability. This study indicates that hydrogen plays a useful role in TFTs by improving the device performance and stability.
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College of Science and Technology > Display Convergence in Division of Display and Semiconductor Physics > 1. Journal Articles

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