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Flexible ambipolar organic field-effect transistors with reverse-offset-printed silver electrodes for a complementary inverter

Authors
Park, JunsuKim, MinseokYeom, Seung-WonHa, Hyeon JunSong, HyenggunJhon, Young MinKim, Yun-HiJu, Byeong-Kwon
Issue Date
3-6월-2016
Publisher
IOP PUBLISHING LTD
Keywords
printed electronics; reverse offset printing; ambipolarity; organic semiconductor; field-effect transistors; complementary inverter
Citation
NANOTECHNOLOGY, v.27, no.22
Indexed
SCIE
SCOPUS
Journal Title
NANOTECHNOLOGY
Volume
27
Number
22
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/88363
DOI
10.1088/0957-4484/27/22/225302
ISSN
0957-4484
Abstract
We report ambipolar organic field-effect transistors and complementary inverter circuits with reverse-offset-printed (ROP) Ag electrodes fabricated on a flexible substrate. A diketopyrrolopyrrole-based co-polymer (PDPP-TAT) was used as the semiconductor and poly (methyl methacrylate) was used as the gate insulator. Considerable improvement is observed in the n-channel electrical characteristics by inserting a cesium carbonate (Cs2CO3) as the electron-injection/hole-blocking layer at the interface between the semiconductors and the electrodes. The saturation mobility values are 0.35 cm(2) V-1 s(-1) for the p-channel and 0.027 cm(2) V-1 s(-1) for the n-channel. A complementary inverter is demonstrated based on the ROP process, and it is selectively controlled by the insertion of Cs2CO3 onto the n-channel region via thermal evaporation. Moreover, the devices show stable operation during the mechanical bending test using tensile strains ranging from 0.05% to 0.5%. The results confirm that these devices have great potential for use in flexible and inexpensive integrated circuits over a large area.
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Ju, Byeong kwon
공과대학 (전기전자공학부)
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