Effect of reverse body bias on hot-electron-induced punchthrough reliability of pMOSFETs with thin gate dielectric at high temperatures
DC Field | Value | Language |
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dc.contributor.author | Kang, YongHa | - |
dc.contributor.author | Kim, JongKyun | - |
dc.contributor.author | Lee, NamHyun | - |
dc.contributor.author | Oh, MinGeon | - |
dc.contributor.author | Hwang, YuChul | - |
dc.contributor.author | Moon, ByungMoo | - |
dc.date.accessioned | 2021-09-03T23:29:55Z | - |
dc.date.available | 2021-09-03T23:29:55Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2016-06 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/88551 | - |
dc.description.abstract | The effect of the reverse body bias V-SB on the hot-electron-induced punch-through (HEIP) reliability of pMOSFETs with a thin gate dielectric at high temperatures was investigated for the first time. Experimental results indicate that the reverse V-SB increased the HEIP degradation for a thin pMOSFET because of the increase in the maximum electric field E-m due to the increase in the threshold voltage V-th. The sensitivity of HEIP degradation to V-SB increased with increasing body effect coefficient gamma at a given oxide thickness T-ox. However, a thin device (22 angstrom) showed a much stronger dependence of HEIP degradation on V-SB due to the decrease in the velocity saturation length l, although it had a smaller. than a thick device (60 angstrom). These new observations suggest that the body bias technique for improving circuit performance can cause a reliability problem of nanoscale pMOSFETs at high temperatures and impose a significant limitation on CMOS device scaling. (C) 2016 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Effect of reverse body bias on hot-electron-induced punchthrough reliability of pMOSFETs with thin gate dielectric at high temperatures | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Moon, ByungMoo | - |
dc.identifier.doi | 10.7567/JJAP.55.064101 | - |
dc.identifier.scopusid | 2-s2.0-84973480937 | - |
dc.identifier.wosid | 000377062700014 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.55, no.6 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 55 | - |
dc.citation.number | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
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