Hybrid indium tin oxide/Ag nanowire electrodes for improving the light output power of near ultraviolet AlGaN-based light-emitting diode
- Authors
- Park, Jae-Seong; Kim, Jae-Ho; Kim, Jun-Yong; Kim, Dae-Hyun; Kang, Daesung; Sung, Jun-Suk; Seong, Tae-Yeon
- Issue Date
- 5월-2016
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Silver nanowires; Near ultraviolet light-emitting diodes; Current spreading
- Citation
- CURRENT APPLIED PHYSICS, v.16, no.5, pp.545 - 548
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 16
- Number
- 5
- Start Page
- 545
- End Page
- 548
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/88794
- DOI
- 10.1016/j.cap.2016.03.004
- ISSN
- 1567-1739
- Abstract
- Ag nanowires (Ag NWs) were combined with a thin indium tin oxide (ITO) film as the p-type electrode in near ultraviolet (NUV) AlGaN-based light-emitting diodes (LEDs) to improve the light output power. The Ag NWs (30 +/- 5 nm in diameter and 25 +/- 5 mu m long) were dispersed in ethanol (0.3 wt%). The transmittances of 10 nm-thick ITO, ITO/Ag NWs coated at 1000 rpm, and ITO/Ag NWs coated at 3000 rpm were 98%, 90%, and 97% at 385 nm, respectively. LEDs (chip size: 300 +/- 800 mu m(2)) fabricated with the ITO/Ag NW electrode exhibited higher forward-bias voltages than the LEDs with the ITO-only electrode. However, LEDs with ITO/Ag NWs films coated at 1000 and 3000 rpm yielded 7.9 and 14.0% higher light output power, respectively, at 100 mA than the LED with ITO-only electrode. The improved output power with the ITO/Ag NWs films is attributed to an optimal trade-off between optical transmittance and current spreading. (C) 2016 Elsevier B.V. All rights reserved.
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