Dislocation effects in FinFETs for different III-V compound semiconductors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hur, Ji-Hyun | - |
dc.contributor.author | Jeon, Sanghun | - |
dc.date.accessioned | 2021-09-04T00:27:03Z | - |
dc.date.available | 2021-09-04T00:27:03Z | - |
dc.date.created | 2021-06-17 | - |
dc.date.issued | 2016-04-20 | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/88906 | - |
dc.description.abstract | While Si-based devices are facing the limits of scaling, III-V materials, having high mobility, have attracted more and more attention. However, their advantages are obtained by ignoring the drawbacks of inevitably present dislocations. In this paper, we present a theoretical model that describes the degradation in carrier mobility caused by these inevitable charged dislocations in nanometer-sized, quantum-confined III-V compound semiconductor fin-shaped field effect transistors. We conclude that the Fermi-level pinning effect needs to be resolved to give carriers high enough energy (Fermi energy in the channel) to effectively ignore Coulomb scattering of charges at dislocations in a channel made by III-V compound semiconductors. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | HOT-CARRIER DEGRADATION | - |
dc.subject | SCATTERING | - |
dc.subject | MOBILITY | - |
dc.subject | MOSFETS | - |
dc.subject | GAN | - |
dc.title | Dislocation effects in FinFETs for different III-V compound semiconductors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hur, Ji-Hyun | - |
dc.contributor.affiliatedAuthor | Jeon, Sanghun | - |
dc.identifier.doi | 10.1088/0022-3727/49/15/155101 | - |
dc.identifier.scopusid | 2-s2.0-84962242588 | - |
dc.identifier.wosid | 000373620600004 | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.49, no.15 | - |
dc.relation.isPartOf | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.volume | 49 | - |
dc.citation.number | 15 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | HOT-CARRIER DEGRADATION | - |
dc.subject.keywordPlus | SCATTERING | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | MOSFETS | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordAuthor | III-V compound semiconductor | - |
dc.subject.keywordAuthor | MOSFET | - |
dc.subject.keywordAuthor | dislocation | - |
dc.subject.keywordAuthor | carrier scattering | - |
dc.subject.keywordAuthor | mobility | - |
dc.subject.keywordAuthor | FinFET | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.